2N7001TDCKR

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2N7001TDCKR

VOLTAGE TRANSLATOR

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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
TranslatorType Voltage Level
ChannelType Unidirectional
NumberofCircuits 1
ChannelsperCircuit 1
Voltage-VCCA 1.65 V ~ 3.6 V
Voltage-VCCB 1.65 V ~ 3.6 V
InputSignal CMOS
OutputSignal CMOS
OutputType Push-Pull
DataRate 100Mbps
OperatingTemperature -40°C ~ 125°C
MountingType Surface Mount
Package/Case 5-TSSOP, SC-70-5, SOT-353

Übersicht

Description

The 2N7001TDCKR is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for low-voltage applications. It is widely used in switching and amplification tasks due to its high efficiency and low on-resistance. The device features a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of 200mA, making it suitable for various electronic circuits.
This MOSFET is characterized by its fast switching capabilities, low gate threshold voltage, and low power consumption, making it ideal for battery-operated devices and signal processing applications. The 2N7001TDCKR is housed in a compact SOT-23 package, allowing for easy integration into space-constrained designs.
Overall, the 2N7001TDCKR is a reliable choice for engineers looking to manage power efficiently in small-scale electronics, such as in motor drivers, power management systems, and signal switching applications.

Features

The 2N7001TDCKR is an N-channel MOSFET designed for low voltage and low power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for various circuit applications.
2. Current Rating: The device supports a continuous drain current (I_D) of up to 200mA, allowing it to handle moderate loads.
3. Low On-Resistance: Offers low on-resistance (R_DS(on)), typically around 0.6Ω at V_GS = 10V, which minimizes power loss and heat generation.
4. Fast Switching Speed: Capable of fast switching, making it ideal for applications in switching power supplies and signal switching.
5. Surface-Mount Package: Comes in a compact SOT-23 package, suitable for space-constrained designs.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is low (1-3V), allowing it to be driven by low-voltage logic levels.
Overall, the 2N7001TDCKR is widely used in electronic circuits for switching and amplification applications due to its efficiency and compact size.

Package

The 2N7001TDCKR is packaged in a SOT-23 form factor, which is a small surface-mount package with three terminals.

Pinout

The 2N7001TDCKR is an N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G) - This is the control terminal that regulates the flow of current between the drain and source. A voltage applied to the gate creates an electric field that allows current to flow.

2. Drain (D) - This is the terminal through which the current exits the MOSFET. It is connected to the load in a circuit.
3. Source (S) - This terminal is where the current enters the MOSFET from the source voltage.
In summary, the 2N7001TDCKR features 3 pins: Gate, Drain, and Source, enabling it to function as a low-voltage switching device in various electronic applications.

Manufacturer

The 2N7001TDCKR is manufactured by Texas Instruments, Inc. Texas Instruments (TI) is a technology company headquartered in Dallas, Texas, primarily known for its semiconductor products and integrated circuits. Established in 1930, TI operates in various sectors, including analog and embedded processing, offering a wide range of electronic components used in consumer electronics, automotive, industrial, and communication applications. The company focuses on innovation in semiconductor technologies and is recognized for its contributions to the development of calculators, microcontrollers, and digital signal processors. TI is a major player in the global semiconductor market, providing solutions that enhance the performance and efficiency of electronic systems.

Application

The 2N7001TDCKR is an N-channel MOSFET commonly used in low-power switching applications. Key application areas include:
1. Switching Regulators: For power conversion.
2. Signal Switching: In digital circuits for controlling signals.
3. Relay Replacement: For controlling loads.
4. Low-Side Switching: In motor control and LED drivers.
5. Amplifier Circuits: As a small-signal amplifier.
Its low gate threshold and fast switching capabilities make it suitable for various electronic applications.

Equivalent

The 2N7001TDCKR is an N-channel MOSFET. Equivalent products include the BS170, 2N7000, and BS250. For similar specifications, you might also consider the MMBT2222A, though it's a bipolar transistor, and the IRLML2502 for a low RDS(on) option. Always verify the datasheets for specific application requirements.

Versand

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