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2N7002-TP
MOSFET N-CH 60V 115MA SOT23
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- Fr. Teil #2N7002-TP
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- Datenblatt 2N7002-TP DataSheet
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Spezifikationen
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 115mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Rds On (Max) @ Id, Vgs | 7.5Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 25 V |
| Power Dissipation (Max) | 1.08W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | 2N7002 |
Übersicht
Description
With a maximum drain-source voltage (V_DS) of 60V and continuous drain current (I_D) capability of up to 0.5A, the 2N7002-TP is ideal for low-voltage applications. It features a gate threshold voltage (V_GS(th)) of approximately 2-4V, meaning it turns on fully with a gate voltage of around 5V.
The device is packaged in a TO-92 style, suitable for through-hole mounting, and is often used in hobbyist projects and prototyping due to its availability and affordability. Overall, the 2N7002-TP is a versatile component in electronics, particularly in low-power applications.
Features
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 60V, allowing for high-voltage applications.
2. Current Rating: Continuous drain current (I_D) of 0.5A, suitable for moderate current loads.
3. Low On-Resistance: R_DS(on) is typically around 0.5Ω at V_GS = 10V, ensuring efficient power management with minimal heat generation.
4. Gate Threshold Voltage: V_GS(th) ranges from 1V to 3V, enabling operation with low gate drive voltages.
5. Package Type: Available in a variety of packages, including TO-92, making it easy to integrate into different circuit designs.
6. Fast Switching Speed: Capable of fast switching, ideal for high-speed applications such as inverters and switching circuits.
7. Low Gate Charge: Minimal gate charge (Q_G), enhancing efficiency in drive circuits.
These features make the 2N7002-TP suitable for a wide range of applications, including power management, signal switching, and driver circuits.
Package
Pinout
1. Gate (G): This pin controls the MOSFET. A voltage applied to this pin allows current to flow from the drain to the source.
2. Drain (D): This is the pin where the main current enters the MOSFET. It connects to the load in a typical switching application.
3. Source (S): This is the pin through which the current exits the MOSFET. It is usually connected to ground in low-side switching applications.
The 2N7002 is commonly used for low-power switching and amplification in various electronic circuits.
Manufacturer
Application
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