2N7002K-T1-GE3

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2N7002K-T1-GE3

MOSFET N-CH 60V 300MA TO236

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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 300mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 2Ohm @ 500mA, 10V
Vgs(th)(Max)@Id 2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 0.6 nC @ 4.5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 30 pF @ 25 V
PowerDissipation(Max) 350mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)

Übersicht

Description

The 2N7002K-T1-GE3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low voltage and low power applications. With a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of 0.5A, it is suitable for switching and amplification tasks in various electronic circuits.
The device features a low gate threshold voltage, typically around 2-4V, allowing it to be driven with standard logic levels. The 2N7002K-T1-GE3 comes in a compact SOT-23 package, making it ideal for space-constrained applications. It exhibits low on-resistance (R_DS(on)), leading to reduced power loss during operation.
Applications include signal switching, level shifting, and driving small loads in consumer electronics, automotive systems, and industrial controls. It is noted for its reliability and efficiency, making it a popular choice among engineers in the design of compact and efficient electronic systems.

Features

The 2N7002K-T1-GE3 is an N-channel MOSFET designed for low-power applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 60V.
2. Continuous Drain Current: Capable of handling a continuous drain current (I_D) of up to 0.5A.
3. R_DS(on): Low on-resistance (R_DS(on)) for efficient operation, typically around 0.8 ohms at 10V gate-source voltage (V_GS).
4. Gate Threshold Voltage: Gate-source threshold voltage (V_GS(th)) ranges from 1V to 3V, allowing for easy drive with low control voltages.
5. Package Type: Available in the compact SOT-23 package, enabling efficient space utilization on PCBs.
6. Fast Switching Speed: Suitable for applications requiring quick switching, enhancing performance in digital circuits.
7. Applications: Commonly used in low-side switching, relay drivers, and as a switch in low-voltage applications.
Overall, the 2N7002K-T1-GE3 is versatile for various electronic circuit needs, balancing performance and efficiency.

Package

The 2N7002K-T1-GE3 is packaged in a SOT-23 form factor.

Pinout

The 2N7002K-T1-GE3 is an N-channel MOSFET with a total of three pins. The pinout is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow between the drain and source.

2. Drain (D): This is the terminal through which current flows from the load to the MOSFET when it is in the 'on' state.
3. Source (S): This is the terminal connected to the ground or the reference voltage. Current exits through this pin when the device is on.
In summary, the pin count is three, and the functions are Gate, Drain, and Source, enabling the MOSFET to control electrical power in various applications.

Manufacturer

The manufacturer of the 2N7002K-T1-GE3 is ON Semiconductor. ON Semiconductor is an American company that specializes in semiconductor manufacturing and provides a wide range of products, including analog, mixed-signal, and digital semiconductors. Founded in 1999, the company focuses on designing and manufacturing innovative semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. ON Semiconductor is committed to sustainability and energy efficiency, often developing products that help customers reduce power consumption and enhance performance.

Application

The 2N7002K-T1-GE3 is a N-channel MOSFET commonly used in low-power switching applications. Its application areas include signal amplification, low-side switching in power management circuits, driver circuits for relays and motors, and general-purpose electronic switching. It is also suitable for use in portable devices, LED drivers, and as a level shifter in digital circuits.

Equivalent

The 2N7002K-T1-GE3 is an N-channel MOSFET. Equivalent products include the BS170, 2N7000, 2N7001, and BS108. These devices have similar specifications in terms of voltage ratings and current capabilities, but always check the datasheet for exact parameters to ensure compatibility in your application.

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