2N7002W-7-F

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2N7002W-7-F

MOSFET N-CH 60V 115MA SOT323

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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 115mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 5V, 10V
RdsOn(Max)@IdVgs 7.5Ohm @ 50mA, 5V
Vgs(th)(Max)@Id 2V @ 250µA
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 50 pF @ 25 V
PowerDissipation(Max) 200mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-323

Übersicht

Description

The 2N7002W-7-F is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low-voltage applications. It features a maximum drain-source voltage (V_DS) of 60V and can handle continuous drain currents (I_D) up to 0.5A. With a low on-resistance (R_DS(on)), it enables efficient switching and minimizes power loss, making it suitable for various applications, including switching power supplies, motor drivers, and signal amplification.
This device has a gate threshold voltage (V_GS(th)) typically between 2V to 4V, allowing it to be driven easily with standard logic levels. The 2N7002W-7-F is packaged in a SOT-23 form factor, ensuring a compact size ideal for surface-mount technology (SMT) designs. Its robustness and reliability make it a popular choice in consumer electronics, automotive, and industrial applications. When designing circuits with the 2N7002W-7-F, it's essential to consider thermal management and ensure that gate driving voltage is appropriate for optimal performance.

Features

The 2N7002W-7-F is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various low-power switching applications. Key features include:
- Voltage Rating: Maximum drain-source voltage (V_DS) of 60V.
- Current Rating: Continuous drain current (I_D) of up to 200mA.
- R_DS(on): Low on-resistance for efficient switching (typically around 3.5 ohms).
- Gate Threshold Voltage: V_GS(th) typically between 1V and 3V, allowing for operation with low gate drive voltages.
- Package: Available in a variety of surface-mount packages, enhancing design flexibility.
- Fast Switching Speed: Suitable for high-speed switching applications.
- Applications: Commonly used in signal switching, relay replacement, and drive circuits for low-power loads.
These features make the 2N7002W-7-F an ideal choice for engineers seeking efficient and compact solutions in electronic circuits.

Package

The 2N7002W-7-F is packaged in a SOT-23 surface mount package.

Pinout

The 2N7002W-7-F is an N-channel MOSFET commonly used in low-voltage applications. It comes in a surface mount SOT-23 package, which has a total of three pins.
Pin Configuration:
1. Gate (G) - The control terminal that regulates the flow of current between the drain and source.
2. Drain (D) - The terminal through which the current exits the MOSFET.
3. Source (S) - The terminal through which current enters the MOSFET.
Functionality:
The 2N7002W-7-F is designed for switching and amplification applications in electronic circuits. It can handle a maximum drain current of about 200 mA and has a maximum V_DS (drain-source voltage) of 60V. The device is characterized by a low on-resistance, making it efficient for various switching tasks in consumer electronics, automotive applications, and more.

Manufacturer

The manufacturer of the 2N7002W-7-F is ON Semiconductor. ON Semiconductor is a global semiconductor company that specializes in providing a wide range of semiconductor solutions, including power management, analog, and logic devices. The company serves various industries, including automotive, communications, computing, consumer, medical, and industrial applications. Founded in 1999 and based in Phoenix, Arizona, ON Semiconductor has grown through a combination of organic growth and strategic acquisitions, positioning itself as a key player in the semiconductor industry.

Application

The 2N7002W-7-F is a N-channel MOSFET commonly used in various applications, including low-power switching, signal amplification, and control circuits. It is suitable for use in portable electronics, LED drivers, power management circuits, and automotive applications. Its small package size makes it ideal for compact designs, while its low on-resistance ensures efficient performance in battery-operated devices.

Equivalent

The 2N7002W-7-F is an N-channel MOSFET. Equivalent products include the 2N7000, 2N7002, BS170, and IRF3708. Choose based on specifications like voltage, current ratings, and package type for compatibility in your application. Always verify datasheets for exact parameters before substitution.

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