2SK1317-E

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2SK1317-E

MOSFET N-CH 1500V 2.5A TO3P

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  • Fr. Teil #2SK1317-E
  • Paket TO-3P-3
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Spezifikationen

Package Tube
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 1500 V
Current-ContinuousDrain(Id)@25°C 2.5A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 15V
RdsOn(Max)@IdVgs 12Ohm @ 2A, 15V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 990 pF @ 10 V
PowerDissipation(Max) 100W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-3P

Übersicht

Description

The 2SK1317-E is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various electronic applications. It is known for its high-speed switching capabilities, making it suitable for use in power supplies, amplifiers, and other circuits requiring efficient energy management. The device features low on-resistance, which minimizes power loss during operation, and has a high current handling capacity, allowing it to drive loads effectively.
Typically, the 2SK1317-E is favored in consumer electronics and industrial applications due to its robustness and reliability. Its package type (often TO-220) facilitates effective heat dissipation, further enhancing performance under load. The device operates efficiently within specified voltage and temperature ranges, ensuring longevity and stability in performance.
When integrating the 2SK1317-E into designs, engineers must consider gate voltage levels, thermal management, and parasitic capacitances to optimize performance. Overall, the 2SK1317-E is a versatile component in the field of power electronics.

Features

The 2SK1317-E is an N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: It typically supports a maximum drain-source voltage (V_DS) of around 60V.
2. Current Rating: The continuous drain current (I_D) is approximately 9A, depending on the thermal conditions.
3. Low On-Resistance: It offers lower R_DS(on), contributing to higher efficiency and reduced power loss during operation.
4. Fast Switching Speed: Suitable for high-frequency applications, enhancing performance in circuits such as switching power supplies and inverters.
5. Package Type: Often available in a TO-220 package, facilitating better heat dissipation.
6. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) typically ranges from 2V to 4V, allowing for easier drive with lower gate voltages.
7. Applications: Commonly used in power management, motor control, and other electronic devices requiring efficient switching.
These features make the 2SK1317-E a versatile choice for various electronic applications.

Package

The 2SK1317-E is typically packaged in a TO-220 format. This package type is designed for power transistors, offering good thermal performance and heat dissipation.

Pinout

The 2SK1317-E is an N-channel MOSFET commonly used in power applications. It typically comes in a TO-220 package, which has a pin count of three.
The pin functions are as follows:
1. Gate (G) - This pin controls the MOSFET's operation. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D) - The drain pin is where the output current flows out. This is the pin connected to the load.
3. Source (S) - The source pin is the entry point for the current coming into the MOSFET. It is connected to ground or a lower potential voltage in typical applications.
The 2SK1317-E is known for its low on-resistance and high-speed switching capabilities, making it suitable for various electronic devices and circuits.

Manufacturer

The 2SK1317-E is manufactured by Toshiba Corporation, a prominent Japanese multinational company. Toshiba is known for its diverse range of products and services, including electronic components, semiconductors, consumer electronics, and infrastructure systems. Founded in 1875, the company has established itself as a leader in technology and innovation, contributing to various industries such as information technology, energy, and industrial automation. Toshiba's semiconductor division, which includes the production of transistors like the 2SK1317-E, focuses on developing high-performance electronic components for applications in consumer electronics, automotive, and industrial sectors.

Application

The 2SK1317-E is a high-voltage N-channel MOSFET commonly used in applications such as power supplies, motor drives, and switching regulators. Its features make it suitable for high-speed switching and amplification in electronic circuits. Additionally, it can be used in automotive systems, industrial equipment, and consumer electronics, particularly in power management and conversion tasks.

Equivalent

The 2SK1317-E is an N-channel MOSFET. Equivalent products include the 2SK1317, IRF540, IRFZ44N, and STP16NF06. Always verify specifications and ratings to ensure compatibility for your specific application.

Versand

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