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AONR36366
MOSFET N-CH 30V 30A/34A 8DFN
- Hersteller
- Fr. Teil #AONR36366
- Paket 8-PowerVDFN
- Datenblatt AONR36366 DataSheet
- Auf Lager6399
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Spezifikationen
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 30A (Ta), 34A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 3.5mOhm @ 20A, 10V |
| Vgs(th)(Max)@Id | 2.1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 35 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1835 pF @ 15 V |
| PowerDissipation(Max) | 5W (Ta), 28W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-DFN-EP (3x3) |
Übersicht
Description
Students are likely to engage with theoretical frameworks, case studies, and practical applications to understand the complexities of managing natural resources effectively. The curriculum may also emphasize interdisciplinary approaches, combining insights from biology, geology, and policy studies.
Assessment methods could include coursework, projects, and examinations, designed to evaluate students' understanding and application of the concepts learned. Ultimately, AONR36366 aims to equip students with the knowledge and skills necessary to address contemporary challenges in resource management and promote sustainable practices.
Features
Additionally, the AONR36366 is likely to incorporate user-friendly interfaces for easy operation and monitoring. Its compact form factor can facilitate space-saving installations, making it ideal for constrained areas. Performance metrics such as high speed, low latency, and low power consumption are also common, contributing to overall system efficiency. Overall, the AONR36366 is engineered to meet the needs of modern applications while providing flexibility and scalability.
Package
Pinout
The pin configuration typically includes:
1. Gate 1 (G1): Controls the switch for the first N-channel MOSFET.
2. Drain 1 (D1): The drain terminal for the first MOSFET.
3. Source 1 (S1): The source terminal for the first MOSFET.
4. Gate 2 (G2): Controls the switch for the second N-channel MOSFET.
5. Drain 2 (D2): The drain terminal for the second MOSFET.
6. Source 2 (S2): The source terminal for the second MOSFET.
7. Common Source: Often shared between the two devices, depending on the application.
8. Thermal Pad: For heat dissipation.
Always refer to the specific datasheet for precise pin functions and ratings.
Manufacturer
Application
Equivalent
Versand
VersandmethodenWir
bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.
Versandgebührenreferenz (DHL/FedEx):
DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.
von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.
Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
1. PayPal
2. Kredit- / Debitkarte
3. Überweisung
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