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APT60DQ60BCTG
DIODE ARRAY GP 600V 60A TO247
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- Fr. Teil #APT60DQ60BCTG
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- Datenblatt APT60DQ60BCTG DataSheet
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Spezifikationen
| Part Status | Active |
| Diode Configuration | 1 Pair Common Cathode |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Current - Average Rectified (Io) (per Diode) | 60A |
| Voltage - Forward (Vf) (Max) @ If | 2.4 V @ 60 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Current - Reverse Leakage @ Vr | 25 µA @ 600 V |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 [B] |
| Base Product Number | APT60 |
Übersicht
Description
This MOSFET is characterized by low on-resistance (R_DS(on)), which minimizes conduction losses and enhances overall efficiency. The APT60DQ60BCTG also has a fast switching speed, enabling it to operate effectively in high-frequency applications.
Its packaging typically includes a TO-220 or similar format, facilitating easy heat dissipation and integration into circuit designs. This component is widely used in industrial, automotive, and renewable energy systems due to its reliability and performance.
When selecting this MOSFET, consider parameters like thermal resistance, gate drive requirements, and maximum junction temperature to ensure optimal performance in your specific application.
Features
1. Voltage Rating: It supports a maximum drain-source voltage (VDS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (ID) of up to 60A, providing robust performance under load.
3. Low RDS(on): It has a low on-resistance specification (RDS(on)), which reduces power losses and enhances efficiency, especially in high-frequency applications.
4. Fast Switching Speed: The MOSFET is optimized for fast switching, making it ideal for high-efficiency converters and inverters.
5. Thermal Performance: With a suitable thermal resistance, it ensures efficient heat dissipation, facilitating reliable operation at elevated temperatures.
6. Package Type: Typically offered in a TO-220 package, allowing for easy integration and heat sinking.
These features make the APT60DQ60BCTG suitable for a variety of applications in power electronics, including automotive, industrial, and renewable energy systems.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to this pin turns the MOSFET on, allowing current to flow from the drain to the source.
2. Drain (D): This is the main current-carrying terminal. Current flows from the drain to the source when the MOSFET is on.
3. Source (S): This pin serves as the output terminal where current exits the device when conducting.
The APT60DQ60BCTG is utilized in various applications such as power supplies, motor drives, and inverters, providing efficient switching capabilities. Always refer to the specific datasheet for detailed electrical characteristics and ratings.
Manufacturer
Application
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