APT60DQ60BG

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APT60DQ60BG

DIODE GEN PURP 600V 60A TO247

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  • Fr. Teil #APT60DQ60BG
  • Paket TO-247-2
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Spezifikationen

Package Tube
ProductStatus Active
DiodeType Standard
Voltage-DCReverse(Vr)(Max) 600 V
Current-AverageRectified(Io) 60A
Voltage-Forward(Vf)(Max)@If 2.4 V @ 60 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
ReverseRecoveryTime(trr) 35 ns
Current-ReverseLeakage@Vr 25 µA @ 600 V
MountingType Through Hole
Package/Case TO-247-2
SupplierDevicePackage TO-247 [B]

Übersicht

Description

The APT60DQ60BG is a high-performance N-channel power MOSFET designed for various applications, including power switching and conversion. It features a maximum drain-source voltage (Vds) of 600V and a continuous drain current (Id) rating of 60A, making it suitable for high-voltage and high-current applications. The device is characterized by its low on-resistance (Rds(on)), which minimizes conduction losses and enhances efficiency in power management systems.
This MOSFET is ideal for use in industrial equipment, power supplies, and automotive applications. Its fast switching capabilities contribute to improved performance in inverter and converter circuits. The APT60DQ60BG also includes thermal management features, allowing it to operate reliably under demanding conditions.
The device is typically housed in a TO-220 package, facilitating easy heat dissipation and integration into electronic circuits. Overall, the APT60DQ60BG is a reliable choice for engineers seeking efficient and robust solutions in power electronics.

Features

The APT60DQ60BG is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: 600V maximum drain-to-source voltage, suitable for high-voltage applications.
2. Current Rating: Continuous drain current of up to 60A, allowing for significant power handling.
3. RDS(on): Low on-resistance (typically around 0.18 ohms), which reduces conduction losses and improves efficiency.
4. Gate Threshold Voltage: Typically between 2V to 4V, offering compatibility with various gate driving circuits.
5. Package Type: Available in a TO-220 package, facilitating easy heat dissipation and mounting.
6. Fast Switching: Capable of fast switching speeds, making it ideal for applications like power supplies, motor controls, and inverters.
7. Thermal Resistance: Low thermal resistance ensures efficient heat management, enhancing reliability and performance.
These features make the APT60DQ60BG well-suited for applications in industrial, automotive, and consumer electronics sectors.

Package

The APT60DQ60BG is typically packaged in a TO-220 form factor. This package type is known for its excellent thermal performance and ease of mounting on heat sinks, making it suitable for power applications.

Pinout

The APT60DQ60BG is an N-channel power MOSFET designed for high-performance applications. It has a pin count of 3. The pin configuration is as follows:
1. Gate (G) - This pin controls the MOSFET's operation, allowing it to switch on or off based on the voltage applied.
2. Drain (D) - This is the output pin where the load is connected. The current flows from the drain when the MOSFET is turned on.
3. Source (S) - This pin is connected to the ground or the negative side of the power supply, completing the circuit when the MOSFET is conducting.
The device is capable of handling high currents and voltages, making it suitable for power management and switching applications in various electronic devices.

Manufacturer

The APT60DQ60BG is manufactured by Aptiv, a leading technology company specializing in advanced electrical and electronic systems for the automotive industry. Aptiv focuses on developing innovative solutions that enhance vehicle safety, connectivity, and efficiency. The company is known for its expertise in automotive electronics, including power management, software, and advanced driver-assistance systems (ADAS). Aptiv's products are integral to modern vehicle design, contributing to the growing trend of electrification and automation in transportation.

Application

The APT60DQ60BG is a 600V, 60A IGBT (Insulated Gate Bipolar Transistor) suitable for various applications, including motor drives, power inverters, UPS systems, welding equipment, and renewable energy systems like solar inverters. It is designed for high-efficiency switching in industrial and commercial power conversion applications.

Equivalent

The APT60DQ60BG is a IGBT (Insulated Gate Bipolar Transistor) often used in power applications. Equivalent products include:
1. IRG4PH50KD - Infineon
2. FGA60N60 - ON Semiconductor
3. MIGB60R - Mitsubishi
4. HGTG60N60A4 - Hitachi
Always verify specific parameters like voltage, current ratings, and switching speed for compatibility in your application.

Versand

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bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.


Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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