APTGT35X120T3G

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APTGT35X120T3G

IGBT MODULE 1200V 55A 208W SP3

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  • Fr. Teil #APTGT35X120T3G
  • Paket SP3
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Spezifikationen

Supplier Microchip Technology
Package Bulk
ProductStatus Active
IGBTType Trench Field Stop
Configuration Three Phase Inverter
Voltage-CollectorEmitterBreakdown(Max) 1200 V
Current-Collector(Ic)(Max) 55 A
Power-Max 208 W
Vce(on)(Max)@VgeIc 2.1V @ 15V, 35A
Current-CollectorCutoff(Max) 250 µA
InputCapacitance(Cies)@Vce 2.5 nF @ 25 V
Input Standard
NTCThermistor Yes
OperatingTemperature -40°C ~ 150°C (TJ)
MountingType Chassis Mount
Package/Case SP3

Übersicht

Description

APTGT35X120T3G appears to be a power semiconductor module part number (likely a high-power IGBT/MOSFET module). It’s not a standard discrete part like a transistor by itself, but a packaged device intended for switching in high-current/high-voltage power electronics.
What it’s typically used for:
- Motor drives, inverters, and power supplies
- Renewable energy converters (solar, wind)
- Uninterruptible power supplies and welding equipment
What to look up in the datasheet:
- Rated voltage (Vce/Vds) and current (Ic/It)
- Number of switches/modules inside and the configuration
- Junction/case temperature ranges and cooling requirements
- Gate drive requirements, switching performance, and protection features (overcurrent, short-circuit)
- Package type and mounting/cooling details
How to get a precise intro:
- Search the exact part number on the manufacturer’s site or major distributors (DigiKey, Mouser, etc.) to obtain the datasheet and application notes. If you share the supplier or context (industrial, automotive, etc.), I can help locate the exact spec sheet.

Features

I don’t have the exact datasheet for APTGT35X120T3G on hand. If this is a 1.2 kV, 35 A IGBT/diode module from APT, typical features (variant dependent) are:
- Blocking voltage: ~1,200 V
- Continuous current: ~35 A
- High-speed switching with low losses
- Thermally enhanced with an isolated/mounted tab for heat sinking
- Compact 3G-style/package design
- Gate-drive requirements: around +15 to +18 V (with standard protections for gate)
- Optional built-in fast-recovery diode (availability varies by variant)
- RoHS compliant
Note: exact features (integrated diode, protections, pinout) can vary by sub-model. Please share the datasheet or confirm the exact variant to provide precise specs.

Package

Package type: power IGBT module. APTG35X120T3G is a multi-chip IGBT module (baseplate‑mounted), not a discrete TO‑series or D²PAK style package.

Pinout

Pin count: 3 leads (Gate-Turn-Off Thyristor). Function: APTGT35X120T3G is a GTO device used for high-voltage switching (approx. 1200 V, ~35 A).

Manufacturer

Manufacturer: Advanced Power Technology (APT).
What kind of company: A semiconductor company specializing in power electronics (designs and manufactures power devices like IGBTs/MOSFETs for industrial and automotive applications).

Application

- Industrial motor drives (VFDs)
- Solar/wind inverters and grid interfaces
- Uninterruptible power supplies (UPS) and energy-storage inverters
- Welding equipment and induction heating
- Rail traction and other high‑power traction drives
- High‑power DC–AC/DC–DC converters and power supplies

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Zahlungen

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