AS4C128M16D3LC-12BIN

The AS4C128M16D3LC-12BIN is a high-performance DDR3 SDRAM (Synchronous Dynamic Random Access Memory) memory module produced by Alliance Memory. It features a capacity of 128 Megabits (16 Megabytes) organized in a 16-bit wide configuration. This DRAM operates at a clock speed of 800 MHz and achieves data rates of up to 1600 MT/s (million transfers per second) while using a 1.5V power supply.
The "12" in the part number indicates a cycle time of 12 nanoseconds, providing efficient performance for various applications, including consumer electronics, networking equipment, and industrial systems. The AS4C128M16D3LC-12BIN is designed for compatibility with existing DDR3 standards, making it suitable for upgrading or replacing existing memory in compatible devices.
This memory chip supports various features, including burst mode operation and low power consumption, which enhances overall system efficiency. Its small form factor and reliable operating characteristics make it a popular choice for designers seeking high-density memory solutions.

The AS4C128M16D3LC-12BIN is a 2-gigabit (256MB) DDR3 SDRAM memory chip, organized as 128M x 16 bits. Key features include:
1. Architecture: DDR3 SDRAM technology, providing improved performance and efficiency compared to DDR2.
2. Speed: Operates at a data rate of up to 1600 MT/s (megatransfers per second).
3. Voltage: Low power consumption with a supply voltage of 1.5V (±0.075V).
4. Latency: Offers low latency options, improving responsiveness in applications.
5. Package Type: Available in a standard 78-ball TFBGA (Thin-Fine Ball Grid Array) package.
6. Functionality: Supports various modes, including burst lengths of 4 and 8, allowing for flexible data transfer.
7. Applications: Suitable for use in consumer electronics, mobile devices, and computing systems requiring efficient memory solutions.
Overall, the AS4C128M16D3LC-12BIN is designed for high-performance applications while maintaining low power usage.

The AS4C128M16D3LC-12BIN is packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) format. This package type is designed for space efficiency and thermal performance, suitable for mobile and compact electronic applications.

The AS4C128M16D3LC-12BIN is a DDR3 SDRAM memory chip with a pin count of 78 pins. It is organized as 128M x 16 bits, providing a total memory capacity of 2 gigabits. The device operates at a clock frequency of up to 1600 MT/s and features a variety of functions including data storage, read and write operations, and burst access modes. Key functions of the pins include power supply (VDD, VSS), data lines (DQ0-DQ15), address lines (A0-A13), control commands (CLK, CKE, CS, RAS, CAS, WE), and other functionalities like write enable and read enable. The chip is designed for high-performance applications in consumer electronics, computing, and networking devices.

The AS4C128M16D3LC-12BIN is manufactured by Alliance Memory, Inc. Alliance Memory is a semiconductor company that specializes in the design and supply of memory solutions, including DRAM (Dynamic Random-Access Memory) and SRAM (Static Random-Access Memory) products. The company focuses on providing high-quality, cost-effective memory components for a variety of applications, including consumer electronics, industrial devices, and telecommunications. Founded in 2006, Alliance Memory aims to support the growing demand for memory solutions by offering reliable products that fulfill the needs of various markets.

The AS4C128M16D3LC-12BIN is a 2Gb DDR3 SDRAM memory chip, primarily used in applications such as laptops, desktops, servers, and networking equipment. It is suitable for high-performance computing, graphics processing, and gaming systems due to its fast data access speeds and efficiency. Additionally, it can be utilized in embedded systems and telecommunications devices where reliable memory performance is essential.

The AS4C128M16D3LC-12BIN is a DDR3 SDRAM memory chip. Equivalent products include:
1. Micron MT41J128M16HA-125
2. Hynix H5TQ2G83CFR
3. Samsung K4B4G1646D-BCK0
Ensure compatibility with your specific design requirements, such as timing, voltage, and package type, when selecting alternatives.