BC846BWT1G

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BC846BWT1G

TRANS NPN 65V 0.1A SC70-3

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  • Fr. Teil #BC846BWT1G
  • Paket SC-70-3
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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
TransistorType NPN
Current-Collector(Ic)(Max) 100 mA
Voltage-CollectorEmitterBreakdown(Max) 65 V
VceSaturation(Max)@IbIc 600mV @ 5mA, 100mA
Current-CollectorCutoff(Max) 15nA (ICBO)
DCCurrentGain(hFE)(Min)@IcVce 200 @ 2mA, 5V
Power-Max 150 mW
Frequency-Transition 100MHz
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case SC-70, SOT-323

Übersicht

Description

BC846BWT1G is a specific transistor model produced by ON Semiconductor. It is a general-purpose NPN bipolar junction transistor (BJT) designed for use in various electronic applications, including amplification and switching. This transistor features a maximum collector current of 800 mA and a maximum collector-emitter voltage of 65 V, making it suitable for low to medium power applications.
The BC846BWT1G is often used in signal processing due to its low noise characteristics. It has a high gain (hFE) range, typically between 100 to 300, which allows it to amplify weak signals effectively. The package type is commonly in a small SOT-23 form factor, facilitating space-saving in circuit designs.
Key specifications include a maximum power dissipation of around 500 mW, and it operates efficiently within a temperature range of -55°C to +150°C. Overall, the BC846BWT1G is favored in consumer electronics, automotive applications, and various DIY projects for its reliability and versatility.

Features

The BC846BWT1G is a low-power NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Key features include:
1. Configuration: NPN type, suitable for various electronic circuits.
2. Voltage Rating: Collector-Emitter Voltage (Vce) up to 65V, enabling use in high-voltage applications.
3. Current Rating: Maximum Collector Current (Ic) of 100mA, making it suitable for low to medium current applications.
4. Power Dissipation: Maximum power dissipation of 500mW, allowing it to handle moderate power levels.
5. Gain: High current gain (hFE) typically in the range of 100 to 600, enhancing amplification capabilities.
6. Package Type: Available in SOT-23 surface-mount package, offering a compact footprint ideal for space-constrained designs.
7. Temperature Range: Operating temperature range from -55°C to +150°C, ensuring reliability in various environments.
Overall, the BC846BWT1G is versatile, efficient, and suited for a wide range of electronic applications.

Package

The BC846BWT1G is packaged in a SOT-23 format, which is a small, surface-mount package commonly used for transistors. This package type allows for efficient space utilization on printed circuit boards (PCBs).

Pinout

The BC846BWT1G is a NPN bipolar junction transistor (BJT) packaged in a SOT-23 surface-mount configuration. It features three pins.
Pin Count and Function:
1. Pin 1 (Emitter - E): This pin is connected to the emitter of the transistor, where current exits the device.
2. Pin 2 (Base - B): This pin connects to the base of the transistor, which controls the operation of the transistor (turning it on or off).
3. Pin 3 (Collector - C): This pin connects to the collector of the transistor, where current enters the device.
These pins enable the transistor to function as a switch or amplifier in electronic circuits. The BC846BWT1G is commonly used in low-power switching and amplification applications.

Manufacturer

The BC846BWT1G is manufactured by ON Semiconductor, a global semiconductor company. Founded in 1967, ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor components, including analog, digital, and mixed-signal devices. The company primarily serves various markets, including automotive, industrial, communications, and consumer electronics. ON Semiconductor is known for its commitment to innovation and sustainability, focusing on energy-efficient solutions and technologies that support a range of applications. The BC846BWT1G itself is a small-signal NPN transistor commonly used in switching and amplification applications.

Application

The BC846BWT1G is a general-purpose NPN transistor commonly used in low-power amplification and switching applications. It is suitable for audio and radio frequency applications, signal processing, and as a driver in consumer electronics. Its compact size and low noise make it ideal for use in portable devices, amplifiers, and sensor circuits.

Equivalent

The BC846BWT1G is a NPN bipolar junction transistor (BJT). Equivalent products include the BC547, BC548, and 2N3904. These transistors share similar characteristics in terms of current and voltage ratings, but always check the specific datasheets for detailed parameters to ensure compatibility in your application.

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