BC857BDW1T1G

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BC857BDW1T1G

TRANS 2PNP 45V 0.1A SC88/SC70-6

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  • Fr. Teil #BC857BDW1T1G
  • Paket SC-70-6
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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
TransistorType 2 PNP (Dual)
Current-Collector(Ic)(Max) 100mA
Voltage-CollectorEmitterBreakdown(Max) 45V
VceSaturation(Max)@IbIc 650mV @ 5mA, 100mA
Current-CollectorCutoff(Max) 15nA (ICBO)
DCCurrentGain(hFE)(Min)@IcVce 220 @ 2mA, 5V
Power-Max 380mW
Frequency-Transition 100MHz
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 6-TSSOP, SC-88, SOT-363

Übersicht

Description

The BC857BDW1T1G is a general-purpose, low-power NPN bipolar junction transistor (BJT) designed for a variety of applications, including switching and amplification. It is part of the BC series of transistors and features a maximum collector current of 100 mA and a maximum collector-emitter voltage of 45 V.
Typically housed in a SOT-23 package, the BC857 is characterized by its high current gain (hFE), making it suitable for low-power circuits. It is commonly used in signal processing, audio applications, and as a switch in low-voltage environments.
The transistor operates efficiently with low thermal resistance, allowing for better heat dissipation. Its compact size and reliability make it a popular choice for consumer electronics, automotive, and industrial applications.
When designing circuits with the BC857BDW1T1G, it is essential to consider its voltage and current ratings to ensure optimal performance and prevent damage. This transistor is typically available through various electronic component suppliers.

Features

The BC857BDW1T1G is a low-noise, high-speed NPN bipolar junction transistor (BJT) designed for various switching and amplification applications. Key features include:
1. Type: NPN transistor.
2. Package: SOT-23, a compact surface-mount package ideal for space-constrained applications.
3. Voltage Rating: Collector-Emitter Voltage (Vce) of up to 45V, suitable for moderate voltage applications.
4. Current Rating: Maximum Collector Current (Ic) of 100mA, enabling efficient drive capabilities.
5. Gain: High DC current gain (hFE) that typically ranges from 100 to 800, enhancing amplification performance.
6. Frequency Response: Transition frequency (fT) of up to 150MHz, making it suitable for high-speed applications.
7. Thermal Characteristics: Low thermal resistance, allowing for effective heat dissipation.
These features make the BC857BDW1T1G versatile for use in audio, RF, and linear applications, as well as in signal switching circuits.

Package

The BC857BDW1T1G is packaged in a SOT-23 surface mount package. This small, lightweight package is commonly used for transistors in various electronic applications, providing efficient use of space on printed circuit boards.

Pinout

The BC857BDW1T1G is a surface-mount NPN bipolar junction transistor (BJT) with a total of 3 pins. The pin functions are as follows:
1. Base (B): This is the control pin where the input signal is applied to turn the transistor on or off.
2. Collector (C): This pin is where the output load is connected, allowing current to flow from the collector to the emitter when the transistor is activated.
3. Emitter (E): This pin serves as the output terminal where current exits the transistor, typically connected to ground in common-emitter configurations.
The BC857 is designed for low-frequency applications and is commonly used for signal amplification and switching in electronic circuits. Its compact footprint makes it suitable for surface-mounted designs.

Manufacturer

The BC857BDW1T1G is manufactured by ON Semiconductor. ON Semiconductor is a global semiconductor company that specializes in designing and manufacturing a wide range of components, including power management, analog, and discrete semiconductors. The company serves various industries such as automotive, industrial, communications, and consumer electronics. Founded in 1999, ON Semiconductor has grown through a combination of organic growth and strategic acquisitions, positioning itself as a key player in the semiconductor market.

Application

The BC857BDW1T1G is a low-voltage, low-noise NPN bipolar junction transistor commonly used in applications such as audio amplifiers, signal switching, and general-purpose amplification. It is suitable for low-power consumer electronics, LED drivers, and small-signal applications in telecommunications and computing devices. Its compact size and efficiency make it ideal for use in portable gadgets and automotive electronics.

Equivalent

The BC857BDW1T1G is a PNP bipolar junction transistor (BJT). Equivalent products include the BC557, BC558, and 2N2907. These alternatives may vary in specifications such as current rating, voltage, and gain, so always check the datasheet for specific requirements.

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