BC858CLT1G

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BC858CLT1G

TRANS PNP 30V 0.1A SOT23-3

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  • Fr. Teil #BC858CLT1G
  • Paket SOT23-3
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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
TransistorType PNP
Current-Collector(Ic)(Max) 100 mA
Voltage-CollectorEmitterBreakdown(Max) 30 V
VceSaturation(Max)@IbIc 650mV @ 5mA, 100mA
Current-CollectorCutoff(Max) 15nA (ICBO)
DCCurrentGain(hFE)(Min)@IcVce 420 @ 2mA, 5V
Power-Max 300 mW
Frequency-Transition 100MHz
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-236-3, SC-59, SOT-23-3

Übersicht

Description

The BC858CLT1G is a NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. It features a maximum collector current rating of 800 mA and a maximum collector-emitter voltage of 30 V. The device is encapsulated in a SOT-23 package, making it suitable for space-constrained applications.
Its primary characteristics include a low saturation voltage, high current gain (hFE), and fast switching capabilities, making it ideal for use in audio amplifiers, signal processing, and digital circuits. The BC858CLT1G is also notable for its thermal stability and reliability, with operating temperature ranges typically from −55°C to +150°C.
This transistor is often used in various consumer electronics, automotive applications, and industrial control systems. Overall, the BC858CLT1G is a versatile component for engineers and designers looking to implement efficient electronic solutions.

Features

The BC858CLT1G is a general-purpose NPN transistor housed in a SOT-23 package. Key features include:
1. Type: NPN bipolar junction transistor (BJT).
2. Voltage Ratings: Collector-Emitter Voltage (VCE) up to 30V, and Collector-Base Voltage (VCB) up to 30V, facilitating a range of applications.
3. Current Ratings: Maximum Collector Current (IC) of 100mA, suitable for low-power switching and amplification.
4. Power Dissipation: Typically 300mW, allowing it to handle various loads effectively.
5. Gain: Current gain (hFE) ranges from 100 to 600, providing flexibility in circuit designs.
6. Switching Speed: It offers fast switching capabilities, making it ideal for high-speed applications.
7. Package: SOT-23, a compact surface-mount package, enabling ease of integration in modern electronic devices.
These features make the BC858CLT1G versatile for use in amplifiers, switches, and various other electronic circuits.

Package

The BC858CLT1G is packaged in a SOT-23 surface mount package. This compact form factor is designed for efficient space utilization on PCBs while providing good thermal and electrical performance.

Pinout

The BC858CLT1G is a NPN bipolar junction transistor (BJT) with a total of 3 pins. The pin configuration is as follows:
1. Base (B): This pin is used to control the transistor and is where the input signal is applied.
2. Collector (C): The collector pin is used to collect the current flowing through the transistor. It is connected to the load in switching applications.
3. Emitter (E): The emitter pin allows the current to exit the transistor and is typically connected to ground in low-side switching applications.
The BC858CLT1G is designed for general-purpose amplification and switching applications in electronic circuits. It can handle a maximum collector current of 100 mA and has a maximum collector-emitter voltage of 30 V. Its compact SOT-23 package makes it suitable for space-constrained applications.

Manufacturer

The BC858CLT1G is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in a wide range of products including analog, discrete, and power management devices, as well as sensors and other integrated circuits. The company serves various industries such as automotive, industrial, communications, and consumer electronics. Established in 1999, ON Semiconductor focuses on energy-efficient innovations and is recognized for its commitment to sustainability and advanced technologies in the semiconductor sector.

Application

The BC858CLT1G is a general-purpose NPN bipolar junction transistor (BJT) used in various applications such as signal amplification, switching circuits, and audio devices. It is suitable for low to medium power applications in consumer electronics, automotive electronics, and industrial controls. Its compact design and reliability make it ideal for use in portable devices and compact circuit layouts.

Equivalent

The BC858CLT1G is a general-purpose NPN transistor. Equivalent products include the BC547, 2N3904, MPS2222A, and 2N4401. Ensure to check specifications such as voltage, current ratings, and package style to confirm compatibility for your specific application.

Versand

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DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

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UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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