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BLF278
RF MOSFET 50V CDFM4
- Hersteller
- Fr. Teil #BLF278
- Paket
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Spezifikationen
| Part Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) Common Source |
| Gain | 18dB |
| Voltage - Test | 50 V |
| Current Rating (Amps) | 2.5mA |
| Current - Test | 200 mA |
| Power - Output | 300W |
| Voltage - Rated | 125 V |
| Package | SOT-262A1 |
| Supplier Device Package | CDFM4 |
| Packaging | Bulk |
Übersicht
Description
Key specifications of BLF278 include a maximum drain-source voltage (Vds) of around 50V, a continuous drain current (Id) of up to 25A, and a low Rds(on) value, which minimizes power loss during operation. Its robust design enables it to perform well in demanding environments, making it a popular choice in both consumer and industrial electronics.
Overall, BLF278 is favored for its reliability and efficiency in managing high power levels in various electronic circuits.
Features
1. Power Output: Capable of delivering high output power, typically around 100W in linear mode.
2. Frequency Range: Operates efficiently across a wide frequency range, typically from 30 MHz to 600 MHz, making it suitable for various communication standards.
3. High Gain: Offers high power gain, which reduces the need for additional amplification stages.
4. Thermal Stability: Designed with good thermal management characteristics, allowing for reliable operation under high temperatures.
5. Durability: Built to withstand harsh operating conditions with robust packaging.
6. Class AB Operation: Suitable for Class AB amplifiers, providing an optimal balance between efficiency and linearity.
7. S-Parameters: Good S-parameters for easy matching to RF circuits.
These features make the BLF278 a popular choice in RF amplification for professional applications, including transmitters and linear amplifiers.
Package
Pinout
1. Gate (G) - Controls the transistor's switching and amplification.
2. Drain (D) - Connects to the high-voltage supply and is where the output RF signal is taken.
3. Source (S) - Common ground point for the device, connected to the RF circuit ground.
4. Gate (G) - Similar to Pin 1, it serves as a second gate connection for enhanced performance.
5. Drain (D) - A second drain connection for improved thermal management and performance.
6. Source (S) - A second source connection for better heat dissipation.
The transistor is designed for use in applications such as base stations and other high-frequency RF systems, providing high efficiency and linearity.
Manufacturer
Application
1. Broadcasting: FM and TV transmitters.
2. Telecommunications: Base stations for mobile networks.
3. Industrial RF systems: RF heating and plasma generation.
4. Aerospace and Defense: Radar systems and communication equipment.
5. Test Equipment: Signal generators and amplifiers.
Its high efficiency and linearity make it suitable for these demanding applications.
Equivalent
Versand
VersandmethodenWir
bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.
Versandgebührenreferenz (DHL/FedEx):
DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.
von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.
Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
1. PayPal
2. Kredit- / Debitkarte
3. Überweisung
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