BSC009NE2LS

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BSC009NE2LS

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Spezifikationen

Packaging Reel
Brand Infineon Technologies
Product Type MOSFETs
Subcategory Transistors
Factory Pack Quantity:Factory Pack Quantity 5000
Technology Si
REACH - SVHC Details
Mounting Style SMD/SMT
Package / Case TDSON-8
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 25 V
Id - Continuous Drain Current 100 A
Rds On - Drain-Source Resistance 1 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 168 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 96 W
Channel Mode Enhancement
Tradename OptiMOS
Configuration Single
Fall Time 19 ns
Height 1.27 mm
Length 5.9 mm
Rise Time 33 ns
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 48 ns
Typical Turn-On Delay Time 10 ns
Width 5.15 mm
Part # Aliases SP000893362 BSC9NE2LSXT BSC009NE2LSATMA1
Unit Weight 0.003880 oz
Qualification AEC-Q100
Forward Transconductance - Min 85 S

Übersicht

Description

Introduction to BSC009NE2LS:
- It is a semiconductor device part number used for a power switching element (typical of the BSC family, often a MOSFET).
- The exact type, voltage/current ratings, and package depend on the manufacturer and datasheet.
- For a precise intro, provide the manufacturer or a link to the datasheet. Key specs to verify: Vds (drain–source voltage), Id (continuous current), Rds(on), Vgs(th), package, and switching characteristics.
- Quick next step: search “BSC009NE2LS datasheet” on the manufacturer’s site (or distributor catalogs) to obtain a definitive description and application notes.

Features

BSC009NE2LS Features:
- N-channel enhancement-mode MOSFET
- Voltage rating: 60 V; Continuous current: ~9 A
- Extremely low on-resistance: typical around 9–12 mΩ (at VGS = 4.5 V)
- Logic-level gate drive: fully on at 4.5 V, suitable for low-voltage controllers
- Trench MOSFET architecture for low conduction losses
- Low gate charge and input capacitance for fast switching
- Good avalanche ruggedness and robust SOA for transient protection
- Wide operating temperature range; high dv/dt/di/dt immunity
- RoHS compliant, lead-free (appropriate for automotive and consumer applications)
- Suitable for switching power stages: DC-DC converters, synchronous rectification, motor drives, load switches
Note: Actual values may vary by package and lot; consult the datasheet for exact electrical characteristics and limits.

Package

DPAK (TO-252) surface-mount package. Verify exact variant with the manufacturer’s datasheet, as packaging can vary by supplier.

Pinout

- Pin count: 3 pins (G, D, S) in a SOT-23 package.
- Function: N-channel enhancement-mode MOSFET (power MOSFET) used as a switching transistor in DC-DC converters and other power-management circuits.

Manufacturer

- Manufacturer: ROHM Semiconductor (ROHM Co., Ltd.)
- What kind of company: A Japanese multinational that designs and manufactures semiconductors and electronic components (discretes, ICs, power devices, LEDs) for automotive, industrial, and consumer electronics applications.

Application

BSC009NE2LS is a N-channel enhancement-mode power MOSFET. Common applications:
- High-efficiency switching in DC-DC converters (buck/boost)
- Motor drive and PWM switching stages
- Automotive power management and load switching
- Solar charge controllers and inverters
- General power-supply front ends and adapters

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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