BSC100N06LS3GATMA1

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BSC100N06LS3GATMA1

MOSFET N-CH 60V 12A/50A TDSON

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Spezifikationen

Supplier Infineon Technologies
Package Tape & Reel (TR),Cut Tape (CT)
Series OptiMOS™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 12A (Ta), 50A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 10mOhm @ 50A, 10V
Vgs(th)(Max)@Id 2.2V @ 23µA
GateCharge(Qg)(Max)@Vgs 45 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 3500 pF @ 30 V
PowerDissipation(Max) 2.5W (Ta), 50W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PG-TDSON-8-5

Übersicht

Description

BSC100N06LS3GATMA1 is an introductory biology course designed for non-science majors. It covers fundamental biological concepts, including cell structure, genetics, evolution, ecology, and the diversity of life. The course aims to enhance students' understanding of biological principles and their relevance to everyday life and global issues. Through a combination of lectures, discussions, and laboratory activities, students will develop critical thinking skills and an appreciation for the scientific method. This course often emphasizes real-world applications, encouraging students to connect biology with current events, health, and environmental challenges. Overall, BSC100N06LS3GATMA1 serves as a foundational course for those interested in the biological sciences without a heavy emphasis on mathematics or advanced science prerequisites.

Features

The BSC100N06LS3GATMA1 is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of 60V, making it suitable for a variety of power management applications.
2. Current Rating: It supports a continuous drain current (I_D) of up to 100A, allowing for high power handling.
3. On-Resistance: The device features a low on-resistance (R_DS(on)), which minimizes power loss and improves efficiency when conducting current.
4. Fast Switching: The MOSFET is designed for fast switching speeds, making it ideal for applications such as DC-DC converters and power supplies.
5. Thermal Performance: It comes in a TO-220 package, which facilitates better heat dissipation.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) typically ranges around 2V-4V, enabling it to be easily driven by standard logic levels.
Overall, the BSC100N06LS3GATMA1 is versatile for automotive, industrial, and consumer electronic applications.

Package

The BSC100N06LS3GATMA1 is packaged in a TO-220 form factor. This package type is commonly used for high-power applications, providing effective thermal dissipation and ease of mounting on heatsinks.

Pinout

The BSC100N06LS3GATMA1 is an N-channel MOSFET with a pin count of 3. Its pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET; applying a voltage here turns the device on or off.
2. Drain (D): The current flows out of this pin when the MOSFET is turned on. It is connected to the load.
3. Source (S): This pin is connected to the ground or the negative side of the power supply.
The BSC100N06LS3GATMA1 is designed for high-efficiency switching applications, featuring low on-resistance and fast switching capabilities, making it suitable for use in power management, motor control, and other electronic applications.

Manufacturer

The BSC100N06LS3GATMA1 is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer based in Germany. Infineon specializes in the design and production of a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. The company serves various industries such as automotive, industrial, and consumer electronics, focusing on applications that enhance energy efficiency, safety, and connectivity. Infineon is recognized for its innovation in power management and digital security technologies, making it a key player in the semiconductor industry.

Application

The BSC100N06LS3GATMA1 is a N-channel MOSFET used in various applications, including power management, DC-DC converters, motor drives, and switching power supplies. Its low on-resistance and high-speed switching capabilities make it suitable for energy-efficient designs in consumer electronics, automotive systems, and industrial applications.

Equivalent

The BSC100N06LS3GATMA1 is a N-channel MOSFET, and equivalent products include:
1. IRF100N06
2. STP100N06
3. FQD100N06
4. AOD100N06
Always verify specifications like voltage, current, and on-resistance to ensure compatibility in your application.

Versand

VersandmethodenWir

bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.


Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

Payment Methods

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