BSS123NH6327XTSA1

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BSS123NH6327XTSA1

MOSFET N-CH 100V 190MA SOT23-3

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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
Series OptiMOS™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 190mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 6Ohm @ 190mA, 10V
Vgs(th)(Max)@Id 1.8V @ 13µA
GateCharge(Qg)(Max)@Vgs 0.9 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 20.9 pF @ 25 V
PowerDissipation(Max) 500mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PG-SOT23

Übersicht

Description

BSS123NH6327XTSA1 is a specific part number for a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). MOSFETs are commonly used in electronic circuits for switching and amplification purposes.
The BSS123 is characterized by its low on-resistance, high-speed switching capabilities, and ability to handle moderate power levels, making it suitable for various applications including power management, signal switching, and motor control.
This particular device typically comes in a small SOT-23 package, allowing for compact circuit designs. Its specifications usually include a maximum drain-source voltage (V_DS) of around 60V, a continuous drain current (I_D) of about 200mA, and a threshold voltage (V_GS(th)) range that allows it to be driven by standard logic levels.
In summary, the BSS123NH6327XTSA1 is a versatile N-channel MOSFET ideal for low to moderate power applications in modern electronic devices.

Features

The BSS123NH6327XTSA1 is an N-channel MOSFET designed for various applications such as switching and amplification. Key features include:
1. Voltage Rating: It typically supports a maximum drain-source voltage (Vds) of about 60V.
2. Current Rating: The continuous drain current (Id) can be up to 4.5A, making it suitable for moderate-load applications.
3. On-State Resistance (Rds(on)): Low on-resistance, usually around 0.1 ohms at a gate-source voltage (Vgs) of 10V, which enhances efficiency by reducing power losses.
4. Gate Threshold Voltage (Vgs(th)): The gate voltage needed to turn the MOSFET on is typically between 1-3V, allowing for low-voltage control.
5. Package Type: It is available in a compact surface-mount package, facilitating space-efficient designs.
6. Fast Switching: High-speed switching capabilities make it ideal for applications like power supplies and motor controls.
Overall, the BSS123NH6327XTSA1 is well-suited for various electronic applications requiring reliable performance in a compact form factor.

Package

The BSS123NH6327XTSA1 is packaged in a SOT-23 (Small Outline Transistor) package. This surface-mount package is commonly used for transistors and offers a compact size suitable for various applications.

Pinout

The BSS123NH6327XTSA1 is a N-channel MOSFET typically used in low-power applications. It features a total of three pins. The pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET and is used to turn the device on or off.
2. Drain (D): The drain pin is where the load is connected and conducts current when the MOSFET is on.
3. Source (S): The source pin is connected to the ground or negative side of the circuit.
In terms of function, the BSS123NH6327XTSA1 operates as a switch, allowing current to flow from the drain to the source when a sufficient voltage is applied to the gate. It is designed for high-speed switching applications and is commonly used in electronic circuits for signal switching and control.

Manufacturer

The BSS123NH6327XTSA1 is manufactured by Nexperia, a global semiconductor company. Nexperia specializes in discrete, logic, and MOSFET components, providing essential building blocks for various electronic applications. The company is known for producing high-quality, reliable semiconductor devices, including transistors, diodes, and integrated circuits, catering to industries such as automotive, industrial, and consumer electronics. Nexperia focuses on efficiency in production while ensuring robust performance in its products, making it a key player in the semiconductor market.

Application

The BSS123NH6327XTSA1 is a N-channel MOSFET commonly used in applications such as power management, switching power supplies, motor drivers, and signal amplification. Its low on-resistance and fast switching capabilities make it suitable for battery-operated devices, consumer electronics, and automotive applications.

Equivalent

The BSS123NH6327XTSA1 is an N-channel MOSFET used in various applications. Equivalent products include the BSS123, BSS123NL, and 2N7000. For similar specifications, you can also consider the IRLML2502, BSS138, or BS170. Always verify the datasheets for specific electrical characteristics and ratings to ensure compatibility in your application.

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