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BSS84K-TP
MOSFET P-CH 60V 130MA SOT23
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- Fr. Teil #BSS84K-TP
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- Datenblatt BSS84K-TP DataSheet
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Spezifikationen
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 130mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 30 pF @ 5 V |
| Power Dissipation (Max) | 225mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | BSS84 |
Übersicht
Description
The "K" suffix indicates a specific package type, typically a surface-mount or through-hole configuration, while "TP" refers to the tape and reel packaging, facilitating automated assembly processes. Its fast switching capabilities make the BSS84K-TP ideal for use in power management circuits, motor drives, and signal switching applications. Additionally, it has a high input impedance, allowing for minimal power consumption from the driving signal. Overall, the BSS84K-TP is a versatile component in modern electronic design.
Features
1. Voltage Rating: It typically supports a drain-source voltage (Vds) of around 30V.
2. Current Rating: Capable of handling continuous drain currents, often up to 6.5A.
3. RDS(on): Low on-resistance, usually around 0.1Ω, enhancing efficiency and reducing power loss.
4. Gate Threshold Voltage: The gate-source threshold voltage (Vgs(th)) is typically in the range of 1-2.5V, allowing for easy drive with low voltage logic levels.
5. Package Type: Often available in a surface-mount package, facilitating compact designs.
6. Applications: Commonly used in power management, load switching, and as a high-speed switch in various electronic circuits.
These features make the BSS84K-TP suitable for a variety of applications requiring efficient power control and management.
Package
Pinout
1. Gate (G): Controls the MOSFET's switching operation. A voltage applied here allows current to flow from the drain to the source.
2. Drain (D): The terminal through which the current enters the MOSFET from the load.
3. Source (S): The terminal through which the current exits to ground or the lower potential side of the circuit.
The BSS84K-TP is designed for low-voltage applications, with a maximum drain-source voltage (V_DS) rating of 30V and a maximum continuous drain current (I_D) typically around 200 mA. It's widely used in switching applications and as a signal amplifier.
Manufacturer
Application
Equivalent
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