BSZ075N08NS5ATMA1

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BSZ075N08NS5ATMA1

MOSFET N-CH 80V 40A 8TSDSON

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Spezifikationen

Series OptiMOS™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 7.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.8V @ 36µA
Gate Charge (Qg) (Max) @ Vgs 29.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2080 pF @ 40 V
Power Dissipation (Max) 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TSDSON-8-26
Package / Case 8-PowerTDFN
Base Product Number BSZ075

Übersicht

Description

The BSZ075N08NS5ATMA1 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. Manufactured by Infineon Technologies, it features low on-resistance (RDS(on)), which minimizes power loss during operation, making it suitable for power management tasks in various electronic circuits. Its maximum drain-source voltage (VDS) is 80V, and it can handle continuous drain current (ID) up to 75A, allowing it to manage significant power loads effectively.
The device is typically used in applications such as DC-DC converters, motor drives, and power supplies, where efficiency and thermal performance are critical. It comes in a TO-220 package, facilitating heat dissipation and easy mounting on PCBs. The BSZ075N08NS5ATMA1's fast switching capabilities also make it suitable for high-frequency applications. Overall, it is a reliable choice for engineers looking to implement efficient power solutions in their designs.

Features

The BSZ075N08NS5ATMA1 is an N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 80V, allowing it to handle substantial voltage levels.
2. Current Rating: Capable of conducting a continuous drain current (ID) of 75A, making it suitable for high-current applications.
3. RDS(on): Low on-resistance (RDS(on)) typically around 8 mΩ, which reduces power loss and improves efficiency.
4. Thermal Performance: It comes in a TO-220 package, providing good thermal dissipation characteristics.
5. Fast Switching: High-speed switching capabilities, making it ideal for applications like DC-DC converters and motor drives.
6. Gate Threshold Voltage: A low gate threshold voltage (VGS(th)) ensures compatibility with logic-level control signals.
These features make the BSZ075N08NS5ATMA1 suitable for various applications in power management and control circuits.

Package

The BSZ075N08NS5ATMA1 is packaged in a TO-220 format, which features a three-pin configuration suitable for high-power applications. This package type allows for efficient heat dissipation and is commonly used in power MOSFETs.

Pinout

The BSZ075N08NS5ATMA1 is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for power applications. It typically comes in a DPAK package, which has a pin count of 5.
Pin Functions:
1. Gate (G): Controls the MOSFET operation. A voltage applied here turns the device on or off.
2. Drain (D): The output terminal where the current flows out when the MOSFET is in the on state.
3. Source (S): The terminal where the current enters when the device is on; it is also connected to ground in typical applications.
4. Tab/Heatsink: Often connected to the Source for thermal management.
This MOSFET has low on-resistance and is suitable for applications like DC-DC converters, motor drivers, and other power management systems.

Manufacturer

The BSZ075N08NS5ATMA1 is manufactured by Infineon Technologies AG. Infineon is a German semiconductor manufacturer that specializes in producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, sensors, and automotive electronics. The company is known for its innovation in technologies for energy efficiency, mobility, and security. Infineon serves various markets, including automotive, industrial, and communication technology, and is recognized as a leading player in the semiconductor industry.

Application

The BSZ075N08NS5ATMA1 is a N-channel MOSFET used in various applications, including power management, DC-DC converters, and motor control. Its features make it suitable for automotive, industrial, and consumer electronics, particularly in high-efficiency switching applications where low on-resistance and fast switching speeds are essential.

Equivalent

The BSZ075N08NS5ATMA1 is an N-channel MOSFET. Equivalent products include the IRF3205, FDB075N08, and STP75NF75. When searching for equivalents, consider parameters such as voltage rating, current rating, RDS(on), and package type to ensure compatibility in your application. Always verify specifications before substitution.

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UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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