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BSZ097N10NS5
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- Fr. Teil #BSZ097N10NS5
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- Datenblatt BSZ097N10NS5 DataSheet
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Spezifikationen
| Packaging | Reel |
| Brand | Infineon Technologies |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Factory Pack Quantity:Factory Pack Quantity | 5000 |
| Technology | Si |
| REACH - SVHC | Details |
| Mounting Style | SMD/SMT |
| Package / Case | TSDSON-8 |
| Transistor Polarity | N-Channel |
| Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Id - Continuous Drain Current | 69 A |
| Rds On - Drain-Source Resistance | 13 mOhms |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 3.8 V |
| Qg - Gate Charge | 22 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 69 W |
| Channel Mode | Enhancement |
| Tradename | OptiMOS |
| Configuration | Single |
| Fall Time | 5 ns |
| Height | 1.1 mm |
| Length | 3.3 mm |
| Rise Time | 5 ns |
| Series | OptiMOS 5 |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 21 ns |
| Typical Turn-On Delay Time | 11 ns |
| Width | 3.3 mm |
| Part # Aliases | SP001132550 BSZ097N10NS5ATMA1 |
| Unit Weight | 0.003966 oz |
| Forward Transconductance - Min | 23 S |
Übersicht
Description
Key specifications typically include maximum drain-source voltage, continuous drain current, and gate threshold voltage, which define its performance in circuits. The BSZ097N10NS5 is often integrated into circuit designs for applications requiring fast switching times and high reliability. Its package type, usually a TO-220 or similar, facilitates easy mounting on heatsinks for thermal management.
Overall, the BSZ097N10NS5 is valued for its efficiency, speed, and robustness, making it a popular choice among designers in the power electronics field.
Features
1. Voltage Rating: It has a breakdown voltage of 100V, making it suitable for high voltage applications.
2. Current Capability: The device can handle a continuous drain current of up to 97A, allowing it to manage significant power loads.
3. RDS(on): It features a low on-resistance of about 10 mΩ, which minimizes power loss during operation and enhances efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage ranges from 2V to 4V, suitable for logic level operation.
5. Package Type: It comes in a TO-220 package, providing good thermal performance and ease of mounting.
6. Fast Switching Speed: The BSZ097N10NS5 is designed for rapid switching applications, making it ideal for use in power supplies, converters, and motor drives.
Overall, this MOSFET is favored for its high efficiency, thermal performance, and robust electrical characteristics, making it a popular choice in various power electronic applications.
Package
Pinout
The pinout and their functions are as follows:
1. Gate (G): This pin controls the MOSFET. A voltage applied to this pin allows current to flow between the drain and source.
2. Drain (D): This pin connects to the load. It is where the current exits the MOSFET when it is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It is where the current enters the MOSFET.
The BSZ097N10NS5 is characterized by a low on-resistance (R_DS(on)), which contributes to its efficiency in power applications.
Manufacturer
Application
Equivalent
Versand
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von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
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3. Überweisung
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