BSZ160N10NS3 G

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BSZ160N10NS3 G

MOSFETs N-Ch 100V 40A TSDSON-8 OptiMOS 3

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Spezifikationen

Packaging MouseReel
Standard Pack Qty 5000

Übersicht

Description

The BSZ160N10NS3 G is a high-performance N-channel MOSFET designed for power applications, featuring low on-resistance and high-speed switching capabilities. With a maximum drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 160A, it is well-suited for applications such as power supplies, motor drives, and DC-DC converters.
Key specifications include a low Rds(on) value, which reduces power losses and improves efficiency in circuit designs. The device is packaged in a TO-220 format, allowing for effective heat dissipation and easy mounting on heatsinks.
The BSZ160N10NS3 G also boasts fast switching characteristics, making it ideal for high-frequency applications. Its robust construction ensures reliability under various operating conditions, contributing to longer device lifetimes. Overall, this MOSFET is an excellent choice for engineers seeking efficient and reliable solutions in power management systems.

Features

The BSZ160N10NS3 G is an N-channel MOSFET designed for efficient power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 100V, allowing for versatile use in various high-voltage applications.
2. Current Rating: Capable of handling up to 160A, making it suitable for high-current switching applications.
3. On-Resistance: The low Rds(on) (typically around 10 mΩ) minimizes conduction losses, improving efficiency.
4. Gate Threshold Voltage: A gate threshold voltage (Vgs) range of 2-4V enables compatibility with low-voltage drive circuits.
5. Package: It comes in a TO-220 package, allowing for effective heat dissipation and easy mounting in systems.
6. Fast Switching: The device can switch quickly, beneficial for applications requiring rapid operation.
7. Applications: Commonly used in power supplies, motor drives, and DC-DC converters.
These features make the BSZ160N10NS3 G a reliable choice for engineers looking to optimize performance in power electronics.

Package

The BSZ160N10NS3 G is packaged in a TO-220 format. This package type is commonly used for power MOSFETs, offering effective heat dissipation and ease of mounting on heatsinks.

Pinout

The BSZ160N10NS3 G is a N-channel MOSFET produced by Infineon Technologies. It has a total of 8 pins. Below are the pin functions:
1. Gate (G): Controls the MOSFET's switching (turns it on and off).
2. Drain (D): The output where the current flows out when the device is on.
3. Source (S): The input where the current flows in when the device is on.
4. Tab: Typically connected to the source or can be utilized for heat dissipation.
The BSZ160N10NS3 G is designed for applications requiring high efficiency and fast switching, commonly used in power management, converter circuits, and motor drives. Its low on-resistance and high current handling capabilities make it suitable for various power applications.

Manufacturer

The BSZ160N10NS3 G is manufactured by Nexperia, a company that specializes in discrete semiconductor devices and integrated circuits. Nexperia is known for producing a wide range of components, including MOSFETs, diodes, and other semiconductor products. The company focuses on high-volume manufacturing and offers products that are critical for various applications in automotive, industrial, consumer, and communication markets. Nexperia was formed as a separate entity from NXP Semiconductors in 2017 and has since established itself as a key player in the semiconductor industry, emphasizing quality, reliability, and efficiency in its product offerings.

Application

The BSZ160N10NS3 G is a N-channel MOSFET typically used in applications such as power supplies, DC-DC converters, motor drives, and inverters. Its high switching speed and low on-resistance make it suitable for efficient power management in consumer electronics, industrial equipment, and renewable energy systems. Additionally, it can be employed in automotive applications for energy conversion and electric vehicle systems.

Equivalent

The BSZ160N10NS3 G is an N-channel MOSFET from Infineon. Equivalent products include the IRF3205 from Infineon, AO3400 from Alpha & Omega Semiconductor, and FQD18N10 from Fairchild. Check specifications for voltage, current rating, and R_DS(on) to ensure compatibility.

Versand

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Versandgebührenreferenz (DHL/FedEx):

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UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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