BUK9Y12-40E

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BUK9Y12-40E

MOSFETs

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Übersicht

Description

The BUK9Y12-40E is a N-channel MOSFET designed for high-speed switching applications. It features a low on-resistance (R_DS(on)) of 12 mΩ, which enhances efficiency by minimizing power loss during operation. With a maximum drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) rating of 9A, it is suitable for various applications, including power management, DC-DC converters, and motor control.
This MOSFET is housed in a compact TO-220 package, allowing for easy mounting and efficient heat dissipation. It is characterized by a high-speed switching capability, making it ideal for applications requiring rapid on/off cycles. The device is designed to operate reliably under various conditions, contributing to its versatility in electronic circuits.
Overall, the BUK9Y12-40E is a reliable choice for engineers looking to implement efficient switching solutions in their designs.

Features

The BUK9Y12-40E is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 120V, making it suitable for various power management tasks.

2. Current Rating: The device supports continuous drain current (I_D) of up to 9A at 25°C, with pulsed current capabilities higher.
3. Low R_DS(on): It features a low on-resistance (R_DS(on)) value, typically around 0.12 ohms, which minimizes power losses during operation.
4. Fast Switching: The MOSFET is designed for rapid switching, making it ideal for applications like DC-DC converters, motor drives, and power supplies.
5. Thermal Management: It has a maximum junction temperature of 150°C, allowing for robust thermal performance.
6. Package Type: Available in an I2PAK or TO-220 package, facilitating easy integration into circuit designs.
Overall, the BUK9Y12-40E is ideal for applications requiring efficient power handling and fast switching capabilities.

Package

The BUK9Y12-40E is typically packaged in a TO-220 format. This package type is designed for efficient heat dissipation and is commonly used for power devices in various applications.

Pinout

The BUK9Y12-40E is a N-channel MOSFET, specifically designed for low voltage applications. It features a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage relative to the source will turn the device on or off.
2. Drain (D): This pin connects to the load and is where the current flows out from the MOSFET when it is conducting.
3. Source (S): This pin connects to the ground or the negative side of the power supply, completing the circuit.
The BUK9Y12-40E is designed for high-speed switching and low on-resistance, making it suitable for a variety of power management applications.

Manufacturer

The BUK9Y12-40E is a power MOSFET manufactured by Nexperia, a company that specializes in discrete, logic, and MOSFET components. Nexperia was established as an independent company in 2017, having been spun off from NXP Semiconductors. It focuses on producing high-performance semiconductor solutions used in various applications, including automotive, industrial, and consumer electronics. Nexperia is known for its expertise in semiconductor technology, offering reliable products that are essential for modern electronic designs.

Application

The BUK9Y12-40E is a N-channel MOSFET primarily used in power management applications such as DC-DC converters, motor control, and power switching. Its high efficiency and fast switching capabilities make it suitable for industrial automation, automotive systems, and renewable energy applications like solar inverters. Additionally, it can be utilized in consumer electronics for load switching and power supply designs.

Equivalent

The BUK9Y12-40E is an N-channel MOSFET. Equivalent products include the IRF3205, STP75NF75, and FQP75N06. Be sure to check the specifications like voltage, current rating, and Rds(on) to ensure compatibility with your application.

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