BVSS84LT1G

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BVSS84LT1G

MOSFET P-CH 50V 130MA SOT23-3

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  • Fr. Teil #BVSS84LT1G
  • Paket SOT23-3
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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 50 V
Current-ContinuousDrain(Id)@25°C 130mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 5V
RdsOn(Max)@IdVgs 10Ohm @ 100mA, 5V
Vgs(th)(Max)@Id 2V @ 250µA
GateCharge(Qg)(Max)@Vgs 2.2 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 36 pF @ 5 V
PowerDissipation(Max) 225mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)

Übersicht

Description

BVSS84LT1G is a specific type of electronic component, likely referring to a type of transistor or semiconductor device. Typically, such designations denote characteristics such as the manufacturer, type, and series of the device.
For example, BVSS might indicate a certain family of bipolar junction transistors (BJTs) or MOSFETs, while '84' could refer to a particular model number or series. The 'LT1G' suffix often denotes package type and configuration, with 'G' usually indicating that it is in a tape and reel format for automated assembly.
These components are widely used in electronic circuits for applications like switching, amplification, and signal processing. For detailed specifications like voltage ratings, current capacity, and thermal characteristics, it’s recommended to consult the manufacturer's datasheet, which provides comprehensive information about performance parameters and application guidance.

Features

The BVSS84LT1G is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: Supports a drain-source voltage (V_DS) of up to 30V.
2. Current Capability: Handles continuous drain current (I_D) of up to 84A, suitable for high-current applications.
3. Low R_DS(on): Offers a low on-resistance (R_DS(on)) value, typically around 4.5mΩ, which ensures efficient operation and reduced power loss.
4. Fast Switching Speed: Provides quick switching capabilities, making it ideal for fast-switching applications.
5. Thermal Performance: Designed with a TO-220 package for effective heat dissipation, allowing it to operate at higher temperatures.
6. Gate Threshold Voltage: Features a low gate threshold voltage (V_GS(th)), enhancing compatibility with low-voltage control circuits.
Overall, the BVSS84LT1G is well-suited for applications in power supplies, motor drives, and various electronic circuits requiring efficient switching.

Package

The BVSS84LT1G is packaged in a SOT-23 (Small Outline Transistor) package type.

Pinout

The BVSS84LT1G is a N-channel MOSFET with a total of 8 pins. Its primary function is to act as a switch or amplifier in electronic circuits. This device is designed for low-voltage and high-speed switching applications.
The pin configuration typically includes:
1. Gate (G): Controls the device on/off state.
2. Drain (D): The output terminal where current flows out.
3. Source (S): The input terminal where current flows in.
Additionally, the device may include other pins for protection or specific features, depending on the package type (e.g., SOT-23). The BVSS84LT1G is notable for its low on-resistance and fast switching capabilities, making it suitable for power management in various applications, including power supplies, motor control, and load switching.
For detailed specifications, including maximum ratings and electrical characteristics, refer to the manufacturer's datasheet.

Manufacturer

The BVSS84LT1G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor designs and manufactures a wide range of semiconductor solutions, including power management, analog, and logic devices, as well as sensors and connectivity products. The company serves various industries such as automotive, industrial, consumer electronics, and communications. ON Semiconductor is known for its focus on energy-efficient technologies and innovative solutions that support the growing demand for electronic devices.

Application

The BVSS84LT1G is a Schottky barrier rectifier commonly used in power management applications. Its primary applications include power supply circuits, voltage regulation, reverse polarity protection, and in battery charging systems. It is particularly suitable for low voltage and high-frequency operations due to its fast switching capabilities and low forward voltage drop. Additionally, it can be used in solar inverters and LED drivers.

Equivalent

The BVSS84LT1G is a bipolar junction transistor (BJT) used primarily for switching and amplification. Equivalent products include the BC547, 2N3904, and 2N2222, which offer similar performance characteristics. Always check the datasheets for specific parameters like current rating, voltage rating, and package type to ensure compatibility for your application.

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