C2M0025120D

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C2M0025120D

SICFET N-CH 1200V 90A TO247-3

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Spezifikationen

Series Z-FET™
Part Status Obsolete
Base Product Number C2M0025120
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 34mOhm @ 50A, 20V
Vgs(th) (Max) @ Id 2.4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 161 nC @ 20 V
Vgs (Max) +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 2788 pF @ 1000 V
Power Dissipation (Max) 463W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package TO-247-3
Packaging Tube

Übersicht

Description

C2M0025120D appears to be a specific identifier or code, possibly related to a product, standard, or technical specification. Without additional context, it's challenging to provide precise information about its meaning or relevance. Such codes are often used in various industries, including technology, manufacturing, or logistics, to categorize items, track inventory, or define specifications.
If you have specific details regarding the context in which C2M0025120D is used (such as the industry, product type, or any additional information), I can offer a more tailored response.

Features

The C2M0025120D is a Silicon Carbide (SiC) MOSFET designed for high-efficiency power applications. Key features include:
1. High Voltage Rating: It typically supports a maximum voltage of 1200V, making it suitable for various high-voltage applications.
2. Low On-State Resistance (R_DS(on)): This characteristic leads to reduced conduction losses and improved overall efficiency.
3. Fast Switching Speed: The device offers rapid switching capabilities, which is advantageous for reducing switching losses in power conversion applications.
4. High Temperature Operation: It can operate in elevated temperature environments, enhancing reliability in demanding conditions.
5. Robust Thermal Performance: Excellent thermal conductivity helps in effective heat dissipation.
6. Gate Drive Compatibility: The device is compatible with standard gate drive circuits, simplifying integration into existing designs.
These features make the C2M0025120D suitable for applications such as motor drives, power supplies, and renewable energy systems.

Package

The C2M0025120D is offered in a TO-247 package type. This package is designed for high-power applications, featuring a robust thermal performance and suitable for surface mounting in power electronics.

Pinout

The C2M0025120D is a silicon carbide (SiC) MOSFET designed for power applications. It features a total of 8 pins. The pin configuration and their functions are as follows:
1. Gate (G): Controls the MOSFET on and off states.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal connected to ground or the power source.
4. Gate-Source (G-S) Connection: Used for protection and ensuring proper gate drive.
5. Drain-Source (D-S) Connection: Provides the path for current flow when the MOSFET is on.
6. Thermal Pad: For heat dissipation to maintain optimal operating temperature.
7. Additional pins: May include options for diodes or auxiliary functions, depending on the specific package.
The device is utilized in various applications, including inverters, converters, and motor drives, primarily due to its high efficiency and fast switching capabilities.

Manufacturer

The C2M0025120D is manufactured by C3S, a company that specializes in semiconductor products, particularly silicon carbide (SiC) devices. C3S focuses on high-performance power electronics, catering to applications in various industries such as renewable energy, electric vehicles, and industrial automation. Their products are designed to improve efficiency and reduce energy loss in power conversion systems.

Application

C2M0025120D is commonly used in applications such as industrial automation, robotics, automotive systems, and consumer electronics. Its versatility makes it suitable for motor control, sensor interfacing, power management, and communication systems. The component's reliability and performance enhance efficiency in various electronic devices and systems.

Equivalent

The C2M0025120D chip is a SiC MOSFET. Equivalent products include the STMicroelectronics STP16NF06, Infineon IGBT modules, and ON Semiconductor's NCP series. Other alternatives may include devices from manufacturers like Wolfspeed, Cree, and Mitsubishi, depending on specific voltage and current ratings. Always verify specifications for your application.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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