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C2M0080120D
SICFET N-CH 1200V 36A TO247-3
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- Fr. Teil #C2M0080120D
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- Datenblatt C2M0080120D DataSheet
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Spezifikationen
| Series | C2M™ |
| Part Status | Obsolete |
| Base Product Number | C2M0080120 |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 98mOhm @ 20A, 20V |
| Vgs(th) (Max) @ Id | 4V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 5 V |
| Vgs (Max) | +25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 1000 V |
| Power Dissipation (Max) | 192W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package | TO-247-3 |
| Packaging | Bulk |
Übersicht
Description
Such identifiers are crucial for inventory management, ensuring accurate tracking, and facilitating communication across various departments or with suppliers. Understanding the context in which C2M0080120D is used is essential for its proper application, as it may relate to specific industries or product categories.
For more detailed information, consulting the manufacturer's datasheet or technical documentation associated with C2M0080120D would provide insights regarding its use, specifications, and any relevant applications or limitations.
Features
1. Voltage Rating: It typically offers a maximum drain-source voltage (Vds) of around 120V, allowing it to handle high-voltage applications.
2. Current Rating: It can support substantial continuous drain current, often around 8A, making it suitable for high-current applications.
3. Low On-State Resistance: The Rds(on) (drain-source on-resistance) is low, which reduces power losses during operation and improves efficiency.
4. Fast Switching Speed: The device is designed for rapid switching, making it ideal for high-frequency applications.
5. Thermal Performance: It usually has good thermal stability and can operate efficiently at higher temperatures.
6. Package Type: Typically available in TO-220 or similar packages for easy heat dissipation and mounting.
These features make the C2M0080120D suitable for various applications such as DC-DC converters, motor drives, and power inverters.
Package
Pinout
1. Gate (G): This pin is used to control the MOSFET. Applying a sufficient voltage between the gate and source turns the device on.
2. Drain (D): This pin connects to the load, allowing current to flow through the MOSFET when it is in the on-state.
3. Source (S): This pin is connected to the ground or the negative side of the power supply, completing the circuit.
The C2M0080120D is designed for high-efficiency applications in power electronics, such as inverters and converters. Its SiC technology allows for high-temperature operation and reduced switching losses compared to traditional silicon devices.
Manufacturer
Application
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Zahlungen
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