C3M0015065K

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C3M0015065K

SICFET N-CH 650V 120A TO247-4L

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Spezifikationen

Package Tube
Series C3M™
ProductStatus Active
FETType N-Channel
Technology SiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss) 650 V
Current-ContinuousDrain(Id)@25°C 120A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 15V
RdsOn(Max)@IdVgs 21mOhm @ 55.8A, 15V
Vgs(th)(Max)@Id 3.6V @ 15.5mA
GateCharge(Qg)(Max)@Vgs 188 nC @ 15 V
Vgs(Max) +15V, -4V
InputCapacitance(Ciss)(Max)@Vds 5011 pF @ 400 V
PowerDissipation(Max) 416W (Tc)
OperatingTemperature -40°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247-4L

Übersicht

Description

C3M0015065K refers to a specific product code or model, possibly related to a component in technology, manufacturing, or pharmaceuticals. To provide a precise introduction, it's important to know the context or industry associated with this code. For example, if it pertains to electronics, it could be a chip or module with unique specifications. In pharmaceuticals, it may represent a drug formulation or delivery system.
Understanding the applications, features, and specifications of C3M0015065K is crucial for users or stakeholders in making informed decisions. If you can provide more context or clarify the industry, I can offer a more tailored introduction.

Features

The C3M0015065K is a versatile compact camera module designed for various applications, including industrial automation, robotics, and machine vision. Key features include:
1. Resolution: Typically offers high-resolution imaging capabilities, enabling detailed image capture.
2. Interface: Supports multiple interfaces like USB and MIPI, facilitating easy integration with different systems.
3. Lens Compatibility: Compatible with various lens types for enhanced flexibility in applications.
4. Low-Light Performance: Equipped with advanced sensors to ensure good performance in low-light environments.
5. Compact Design: Lightweight and compact, making it suitable for space-constrained applications.
6. Image Processing: Often includes built-in image processing capabilities, enhancing real-time data analysis.
7. Durability: Designed to withstand industrial conditions, ensuring longevity and reliability in harsh environments.
These features make the C3M0015065K an ideal choice for developers looking to implement efficient imaging solutions in their projects.

Package

The C3M0015065K is typically packaged in a TO-220 package type. This package is designed for efficient heat dissipation and is commonly used for power semiconductor devices.

Pinout

The C3M0015065K is a silicon carbide (SiC) MOSFET manufactured by Cree (now Wolfspeed). It features a surface-mount package with a pin count of 4. The pin functions are as follows:
1. Gate (G): This pin is used to control the switching of the MOSFET. It receives the gate voltage to turn the device on or off.
2. Source (S): This pin serves as the source terminal for the MOSFET, which is where the current flows out when the device is on.
3. Drain (D): This pin is the drain terminal, where the current enters the MOSFET when it is conducting.
4. Thermal/Tab (T): This pin is typically used for thermal management and grounding, often serving as a heat sink connection.
The C3M0015065K is rated for high-voltage applications, making it suitable for use in power electronics and energy-efficient systems.

Manufacturer

The C3M0015065K is manufactured by ON Semiconductor, a company that specializes in semiconductor solutions. ON Semiconductor designs and manufactures a wide range of semiconductor components, including power management, analog, and sensor devices, among others. The company serves various sectors, such as automotive, industrial, consumer electronics, and communication. They focus on creating energy-efficient products and solutions that enable customers to reduce power consumption while enhancing performance. ON Semiconductor is known for its commitment to innovation and sustainability within the semiconductor industry.

Application

C3M0015065K is a silicon carbide (SiC) MOSFET commonly used in high-efficiency power conversion applications. Its application areas include electric vehicles (EVs), renewable energy systems (like solar inverters and wind converters), industrial motor drives, and power supplies for data centers. The device is favored for its high thermal conductivity, low switching losses, and ability to operate at high voltages and temperatures, making it ideal for demanding environments.

Equivalent

The C3M0015065K is a silicon carbide (SiC) MOSFET. Equivalent products include the C3M0015090K, C3M0015120K, and other SiC MOSFETs from different manufacturers like Infineon (CoolSiC series), Wolfspeed (C3M series), and ON Semiconductor (SiC MOSFETs). Ensure to compare specifications like voltage, current ratings, and RDS(on) for compatibility.

Versand

VersandmethodenWir

bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.


Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

Payment Methods

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