C3M0075120K

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C3M0075120K

SICFET N-CH 1200V 30A TO247-4L

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Spezifikationen

Package Tube
Series C3M™
ProductStatus Active
FETType N-Channel
Technology SiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss) 1200 V
Current-ContinuousDrain(Id)@25°C 30A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 15V
RdsOn(Max)@IdVgs 90mOhm @ 20A, 15V
Vgs(th)(Max)@Id 4V @ 5mA
GateCharge(Qg)(Max)@Vgs 51 nC @ 15 V
Vgs(Max) +19V, -8V
InputCapacitance(Ciss)(Max)@Vds 1350 pF @ 1000 V
PowerDissipation(Max) 113.6W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247-4L

Übersicht

Description

C3M0075120K is a specific part number for a type of component, likely related to electronics or manufacturing, but without more context, its exact application is unclear.
If you are referring to a specific component such as a semiconductor, sensor, or mechanical part, please provide additional details for a more tailored response. Generally, part numbers like C3M0075120K are used to identify unique specifications, including dimensions, electrical characteristics, and compatible applications, aiding in procurement and integration into larger systems.
For accurate and detailed information, consulting the manufacturer's datasheet or product documentation would be essential, as it provides in-depth specifications, features, and application guidelines pertinent to the component.

Features

The C3M0075120K is a compact and efficient power module designed primarily for DC-DC conversion applications. Key features include:
1. Input Voltage Range: Typically accepts a wide input voltage range, enhancing versatility for different applications.
2. Output Power: Capable of delivering significant output power, making it suitable for high-demand systems.
3. Efficiency: Designed for high efficiency, which minimizes heat generation and improves thermal management.
4. Compact Design: Features a small form factor, allowing for integration into space-constrained environments.
5. Thermal Performance: Equipped with thermal protection features to prevent overheating and ensure reliable operation.
6. Load Regulation: Provides stable output under varying load conditions, ensuring consistent performance.
7. Isolation: Offers electrical isolation for safety and noise reduction in sensitive applications.
These attributes make the C3M0075120K ideal for use in industrial, telecommunications, and consumer electronics applications, where efficient power management is crucial.

Package

The C3M0075120K is a silicon-carbide (SiC) MOSFET typically found in a TO-247 package. This packaging provides efficient thermal management and robust performance for high-power applications.

Pinout

The C3M0075120K is a SiC (Silicon Carbide) MOSFET that typically comes in a TO-247 package. It features a pin count of 3. The pin functions are as follows:
1. Gate (G) - This pin controls the switching of the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D) - This pin connects to the load and carries the current when the MOSFET is in the on state.
3. Source (S) - This pin is connected to the ground or the negative side of the power supply and serves as the return path for current.
Overall, the C3M0075120K is designed for high-efficiency power applications, providing fast switching and high thermal conductivity.

Manufacturer

The C3M0075120K is manufactured by Cree, Inc., a company specializing in LED lighting and semiconductor solutions. Cree is known for its innovations in silicon carbide (SiC) and gallium nitride (GaN) technologies, particularly for high-performance power and radio frequency (RF) devices. Founded in 1987, Cree has established itself as a leader in the development of energy-efficient lighting and electronic components, catering to various industries including automotive, telecommunications, and power management. The C3M0075120K is a SiC MOSFET designed for high-voltage applications, contributing to improved efficiency and performance in power conversion systems.

Application

C3M0075120K is a silicon carbide (SiC) MOSFET primarily used in power electronics applications. Its areas include electric vehicles (EVs), renewable energy systems (like solar inverters), industrial motor drives, and power supplies. The advantages of SiC technology, such as high efficiency, high temperature operation, and fast switching capabilities, make it ideal for these applications, enhancing performance and reducing energy losses.

Equivalent

The C3M0075120K is a silicon carbide (SiC) MOSFET with a voltage rating of 750V and a current rating of 12A. Equivalent products include:
1. C3M0075120K (onsemi)
2. C3M0075120J (onsemi, similar specs)
3. STP7N80K5 (STMicroelectronics)
4. MCCF075C750V (Mitsubishi Electric)
Always verify specifications for exact suitability in your application.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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