CSD16570Q5B

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CSD16570Q5B

MOSFET N-CH 25V 100A 8VSON

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  • Fr. Teil #CSD16570Q5B
  • Paket PowerTDFN-8
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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
Series NexFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 25 V
Current-ContinuousDrain(Id)@25°C 100A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 0.59mOhm @ 50A, 10V
Vgs(th)(Max)@Id 1.9V @ 250µA
GateCharge(Qg)(Max)@Vgs 250 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 14000 pF @ 12 V
PowerDissipation(Max) 3.2W (Ta), 195W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-VSON-CLIP (5x6)

Übersicht

Description

CSD16570Q5B is a high-performance power MOSFET (metal-oxide-semiconductor field-effect transistor) designed for efficient switching applications. It features low on-resistance and fast switching speeds, making it suitable for power management in various electronic devices, including computers, automotive systems, and industrial applications.
This MOSFET is part of the CSD family from Texas Instruments, known for its robust thermal characteristics and high reliability. With its compact package design, it offers efficient thermal dissipation, making it ideal for space-constrained applications.
Key specifications often include maximum voltage ratings, current handling capabilities, and gate threshold voltages, which are crucial for designing circuits that require precise power control.
Overall, CSD16570Q5B is valued for its performance in enhancing energy efficiency and reliability in modern electronic systems.

Features

The CSD16570Q5B is a high-performance N-channel MOSFET designed for use in various applications, including power management and switching. Key features include:
1. Voltage Rating: It has a breakdown voltage of 60V, making it suitable for medium-voltage applications.
2. RDS(on): The device offers low on-resistance (RDS(on)) of approximately 5.7 mΩ, which enhances efficiency by reducing conduction losses.
3. Current Handling: It can handle continuous drain currents up to 100A, suitable for high-current applications.
4. Fast Switching: The MOSFET supports fast switching speeds, beneficial for high-frequency applications, reducing losses in switching operations.
5. Thermal Performance: It comes in a compact DPAK package, allowing for efficient heat dissipation and compact design integration.
6. Applications: Commonly used in power supplies, motor drives, and DC-DC converters.
These features make the CSD16570Q5B a versatile choice for modern electronic designs requiring reliable and efficient power management.

Package

The CSD16570Q5B is packaged in a 5x6 mm VQFN (Very Thin Quad Flat No-lead) package type. This compact package is designed for efficient thermal performance and space-saving in electronic applications.

Pinout

The CSD16570Q5B is a N-channel MOSFET from Texas Instruments with a total of 5 pins. Its pin configuration is as follows:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The terminal through which current exits the device.
3. Source (S): The terminal through which current enters the device.
4. Body Diode (internal): Provides a path for current in the reverse direction, typically utilized in applications involving inductive loads.
The CSD16570Q5B is designed for efficient power management applications, offering low R_DS(on) for enhanced performance and thermal efficiency. It is commonly used in synchronous rectification, DC-DC converters, and motor control applications.

Manufacturer

The CSD16570Q5B is manufactured by Texas Instruments (TI). Texas Instruments is a multinational technology company headquartered in Dallas, Texas. It specializes in designing and manufacturing semiconductors and various integrated circuits, which are crucial components in a wide array of electronic devices. TI is well-known for its innovations in analog electronics, embedded processing, and digital signal processing. The company serves diverse markets, including automotive, industrial, communications, and consumer electronics, providing solutions that enhance the performance and efficiency of electronic systems.

Application

The CSD16570Q5B is a power MOSFET designed for applications in power management systems, including DC-DC converters, power supplies, and battery management systems. Its features make it suitable for use in computing, telecommunications, consumer electronics, and renewable energy systems, enabling efficient energy conversion and improved thermal performance.

Equivalent

The CSD16570Q5B is a N-channel MOSFET. Equivalent products include:
1. IRF3708
2. AO3400
3. BSC050N06NS
4. STP75NF75
Ensure to check the specific voltage, current ratings, and RDS(on) values for compatibility with your application.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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