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CSD17307Q5A
MOSFET N-CH 30V 14A/73A 8VSON
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- Fr. Teil #CSD17307Q5A
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- Datenblatt CSD17307Q5A DataSheet
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Spezifikationen
| Supplier | Texas Instruments |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | NexFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 14A (Ta), 73A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 3V, 8V |
| RdsOn(Max)@IdVgs | 10.5mOhm @ 11A, 8V |
| Vgs(th)(Max)@Id | 1.8V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 5.2 nC @ 4.5 V |
| Vgs(Max) | +10V, -8V |
| InputCapacitance(Ciss)(Max)@Vds | 700 pF @ 15 V |
| PowerDissipation(Max) | 3W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-VSONP (5x6) |
Übersicht
Description
An "Introduction to CSD17307Q5A" course would generally cover foundational concepts, key theories, and practical applications relevant to its topic. It may include lectures, hands-on projects, and assessments aimed at developing students' understanding and skills.
To gain specific insights into the course content, objectives, and prerequisites, it's advisable to consult the official course syllabus or contact the academic department offering the course.
Features
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 30V, making it suitable for low-voltage applications.
2. On-Resistance: The device boasts a low RDS(on) of around 3.5 mΩ at a gate-source voltage (VGS) of 10V, which helps minimize conduction losses.
3. Current Capacity: It can handle continuous drain current (ID) up to 120A, allowing it to support significant power loads.
4. Package Type: Housed in a compact DPAK package, it facilitates efficient thermal management and PCB space savings.
5. Fast Switching Speed: Designed for high-frequency operation, it features low gate charge (Qg), enabling quick switching and enhancing efficiency.
6. Thermal Performance: With a low thermal resistance, it ensures effective heat dissipation during operation.
These features make the CSD17307Q5A a strong candidate for efficient power management solutions.
Package
Pinout
1. Gate (G) - This pin is used to control the MOSFET operation. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D) - The drain pin is where the current enters the MOSFET. It is connected to the load in a circuit.
3. Source (S) - The source pin is where the current exits the MOSFET. It is typically connected to ground in a low-side switching configuration.
4. (No connection) - The remaining two pins are typically not connected to any function in standard applications.
This device is designed for high-efficiency switching applications, making it suitable for power management and other electronic circuit uses.
Manufacturer
Application
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