CSD17309Q3

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CSD17309Q3

MOSFET N-CH 30V 20A/60A 8VSON

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  • Fr. Teil #CSD17309Q3
  • Paket 8-PowerTDFN
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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
Series NexFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 20A (Ta), 60A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 3V, 8V
RdsOn(Max)@IdVgs 5.4mOhm @ 18A, 8V
Vgs(th)(Max)@Id 1.7V @ 250µA
GateCharge(Qg)(Max)@Vgs 10 nC @ 4.5 V
Vgs(Max) +10V, -8V
InputCapacitance(Ciss)(Max)@Vds 1440 pF @ 15 V
PowerDissipation(Max) 2.8W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-VSON-CLIP (3.3x3.3)

Übersicht

Description

CSD17309Q3 typically refers to a specific course or module within a curriculum, likely focusing on a particular area of study related to computer science or software development. While the exact details may vary by institution, such courses generally cover foundational concepts in programming, software engineering, or system design.
Students can expect to learn about coding principles, algorithms, data structures, and possibly project management methodologies. The course may involve practical assignments, projects, or collaborative work to enhance hands-on experience. Assessments could include exams, quizzes, and project submissions to evaluate understanding and application of the material.
For precise information regarding the syllabus, objectives, prerequisites, and evaluation methods, it’s best to refer to the course outline provided by the educational institution offering it.

Features

The CSD17309Q3 is a high-performance Power MOSFET designed for various applications, particularly in power management systems. Key features include:
1. Low RDS(on): It offers a low on-resistance, ensuring minimal power loss and improved efficiency in switching applications.
2. High Voltage Rating: Capable of handling significant voltage levels, making it suitable for a range of high-voltage applications.
3. Fast Switching Speed: The device is optimized for rapid switching, enhancing performance in fast-paced electronic circuits.
4. Thermal Performance: It has effective thermal characteristics, allowing for better heat dissipation and reliability under load.
5. Compact Package: The small package size facilitates integration into space-constrained designs.
Overall, the CSD17309Q3 is ideal for use in applications such as DC-DC converters, power management systems, and renewable energy solutions, providing efficiency and reliability.

Package

The CSD17309Q3 is packaged in a QFN (Quad Flat No-Leads) format. This type of package provides a compact footprint and efficient thermal performance, making it suitable for various applications in power management and switching.

Pinout

The CSD17309Q3 is a dual N-channel MOSFET packaged in a 3x3mm QFN (Quad Flat No-lead) format. It features a total of 6 pins.
The primary functions of the pins are as follows:
1. G1, G2: Gate terminals for controlling the switching of the two N-channel MOSFETs.
2. D1, D2: Drain terminals that connect to the load and carry the current.
3. S1, S2: Source terminals that connect to ground or the lower potential side of the circuit.
This device is commonly used in power management applications, such as synchronous rectification and load switching, due to its low on-resistance and high efficiency.

Manufacturer

The CSD17309Q3 is manufactured by Texas Instruments (TI), a global semiconductor company. Texas Instruments designs and produces a wide range of electronic components, including analog and digital circuits, microcontrollers, and power management devices. The company is known for its innovation in the field of electronics and serves various markets such as automotive, industrial, communications, and consumer electronics. TI is recognized for its commitment to research and development, providing high-quality products that enable advancements in technology.

Application

CSD17309Q3 is a dual N-channel MOSFET primarily used in power management applications. Its key application areas include synchronous rectification in DC-DC converters, battery management systems, and load switching in consumer electronics. It is suitable for high-efficiency, low-voltage operations in automotive, industrial, and telecommunications sectors.

Equivalent

The CSD17309Q3 is a N-channel MOSFET designed for high-efficiency power conversion. Equivalent products include the Texas Instruments CSD17308Q3, Infineon BSC032N06NS, and Vishay Si4460. Always verify specifications like voltage, current ratings, and RDS(on) to ensure compatibility in your application.

Versand

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Zahlungen

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