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CSD17506Q5A
MOSFET N-CH 30V 100A 8VSON
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- Datenblatt CSD17506Q5A DataSheet
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Spezifikationen
| Series | NexFET™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1650 pF @ 15 V |
| Power Dissipation (Max) | 3.2W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-VSONP (5x6) |
| Package / Case | 8-PowerTDFN |
| Base Product Number | CSD17506 |
Übersicht
Description
To gain an understanding of CSD17506Q5A, one might look at the manufacturer's documentation or website, which would provide insights into its functionalities, applications, and any unique selling points. If this code pertains to a semiconductor or electronic component, details on its performance metrics, dimensions, and integration capabilities would be crucial for engineers and designers.
For further clarification or specific applications, checking industry resources or reaching out to the manufacturer directly would be beneficial.
Features
1. Low ON Resistance: It offers a low R_DS(on) for efficient power handling, minimizing conduction losses.
2. High Voltage Rating: Supports a maximum drain-to-source voltage (V_DS) of 60V, suitable for various applications.
3. High Current Capability: Can handle continuous drain currents up to 75A, making it effective in demanding environments.
4. Fast Switching Speed: Optimized for quick switching, enhancing performance in synchronous rectification and other fast-switching applications.
5. Thermal Performance: The package is designed for effective heat dissipation, improving reliability in thermal management.
6. Compact Package: Available in a 5mm x 6mm QFN package, facilitating space-saving designs in electronics.
These features make the CSD17506Q5A ideal for use in power management systems, motor drives, and renewable energy applications.
Package
Pinout
1. Gate (G): Controls the MOSFET's switching; applies voltage to turn the device on or off.
2. Drain (D): The output terminal; current flows from the drain to the source when the device is on.
3. Source (S): The terminal through which current exits the MOSFET; connected to ground in low-side switching applications.
4. Drain-Source Voltage (V_DS): Indicates the maximum voltage the device can handle between the drain and source.
5. Gate-Source Voltage (V_GS): Indicates the maximum voltage that can be applied between the gate and source.
The device is designed for efficient power management applications, featuring low on-resistance and high-speed switching capabilities.
Manufacturer
Application
Equivalent
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Zahlungen
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