CSD17577Q3A

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CSD17577Q3A

MOSFET N-CH 30V 35A 8VSON

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  • Fr. Teil #CSD17577Q3A
  • Paket PowerVDFN-8
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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
Series NexFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 35A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 4.8mOhm @ 16A, 10V
Vgs(th)(Max)@Id 1.8V @ 250µA
GateCharge(Qg)(Max)@Vgs 35 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 2310 pF @ 15 V
PowerDissipation(Max) 2.8W (Ta), 53W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-VSONP (3x3.3)

Übersicht

Description

CSD17577Q3A is a specific part number designating a power management integrated circuit (PMIC) produced by Texas Instruments. This device is designed for use in battery-powered applications, providing efficient power conversion and management capabilities. It typically features multiple output channels, allowing it to manage different voltage levels required by various components in a system.
Key features often include high efficiency, low quiescent current, and integrated protection mechanisms such as overvoltage and overcurrent protection. The part is used in a wide range of applications, including consumer electronics, industrial devices, and automotive systems, where reliable and efficient power delivery is critical.
For detailed specifications, usage scenarios, and design recommendations, it’s best to refer to the official datasheet provided by Texas Instruments.

Features

The CSD17577Q3A is an N-channel MOSFET from Texas Instruments, designed for high-performance power management applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (VDS) of 60V, making it suitable for a variety of applications.
2. On-Resistance: With a low RDS(on) of around 4.5 mΩ at VGS = 10V, it enhances efficiency by minimizing conduction losses.
3. Current Handling: It can handle continuous drain currents up to 60A, depending on the thermal conditions.
4. Package Type: It is available in a compact 3.3 mm x 3.3 mm QFN package, allowing for space-saving designs.
5. Fast Switching: Designed for fast switching applications, contributing to better performance in power converters.
6. Low Gate Charge: Features a low total gate charge (QG), facilitating faster switching speeds and reduced drive losses.
These attributes make the CSD17577Q3A suitable for applications like DC-DC converters, motor drives, and power management systems.

Package

The CSD17577Q3A is packaged in a 3x3 mm QFN (Quad Flat No-lead) package. This type of package provides a compact form factor, efficient thermal performance, and reduced parasitic inductance, making it suitable for high-performance applications.

Pinout

The CSD17577Q3A is a N-channel MOSFET designed for power management applications. It has a total of 8 pins. The primary functions of these pins include:
1. Gate (G): Controls the switch operation.
2. Drain (D): The output where the load is connected.
3. Source (S): The connection to ground or the negative side of the power supply.
The pin configuration typically includes additional connections for thermal and electrical performance, such as a substrate or package ground. Make sure to consult the specific datasheet for detailed pin assignments and electrical characteristics for precise applications.

Manufacturer

The CSD17577Q3A is manufactured by Texas Instruments (TI). Texas Instruments is a global semiconductor design and manufacturing company headquartered in Dallas, Texas. It specializes in the development of analog and embedded processing chips that are used in a variety of electronic devices, including consumer electronics, automotive systems, industrial equipment, and communication infrastructure. TI is known for its innovation and leadership in the semiconductor industry, focusing on providing high-performance solutions for power management, signal processing, and microcontrollers.

Application

CSD17577Q3A is a high-performance, low-resistance power MOSFET primarily used in applications such as DC-DC converters, power management systems, and battery management solutions. Its fast switching capabilities make it suitable for high-efficiency power supplies, motor drives, and renewable energy systems. Additionally, it is often utilized in automotive applications for electric and hybrid vehicles.

Equivalent

The CSD17577Q3A is a dual N-channel MOSFET. Equivalent products include the following:
1. SiR662DP
2. BSC086N08LS
3. IRF3205
4. FDS6675
When selecting an equivalent, ensure to check parameters such as voltage rating, current rating, RDS(on), and package type to ensure compatibility with your application.

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