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CSD18532NQ5B
CSD18532NQ5B - 60V, N CH NEXFET
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- Datenblatt CSD18532NQ5B DataSheet
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Spezifikationen
| Supplier | Rochester Electronics, LLC |
| Package | Bulk |
| Series | NexFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 22A (Ta), 100A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 6V, 10V |
| RdsOn(Max)@IdVgs | 3.4mOhm @ 25A, 10V |
| Vgs(th)(Max)@Id | 3.4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 64 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 5340 pF @ 30 V |
| PowerDissipation(Max) | 3.2W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-VSON-CLIP (5x6) |
Übersicht
Description
Typically, the CSD18532NQ5B is characterized by a voltage rating of around 30V and current rating capabilities that allow it to handle significant power loads. It is often found in surface-mount packages, facilitating compact designs in modern electronic circuits.
This MOSFET is favored in designs requiring high efficiency and thermal performance due to its low thermal resistance. With its enhanced reliability and robustness, it is ideal for applications in consumer electronics, automotive, and industrial sectors.
For precise specifications and application guidance, referring to the manufacturer's datasheet is recommended.
Features
1. R_DS(on): Typically 2.5 mΩ, providing efficient power handling for applications.
2. Max V_DS: Rated at 40V, suitable for various power supply and conversion applications.
3. I_D: Continuous drain current of up to 120A at 25°C, allowing for high current handling in applications.
4. Thermal Resistance: Low junction-to-case thermal resistance ensures effective heat dissipation.
5. Transconductance: High g_fs value enhances switching speed, improving efficiency.
6. Package: Available in a TO-220 package for easy heat sinking and mounting.
7. Applications: Ideal for synchronous buck converters, DC-DC converters, and other power management circuits.
The CSD18532NQ5B is designed for high efficiency in power electronics, contributing to improved thermal performance and reliability in demanding environments.
Package
Pinout
The pin configuration is as follows:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The terminal where the load is connected, allowing current to flow to the load when the MOSFET is on.
3. Source (S) - The terminal connected to ground or the negative side of the power supply, allowing current to flow from the drain to the source.
This device is commonly used in power management applications, including DC-DC converters and motor control systems, due to its low on-resistance and high efficiency.
Manufacturer
Application
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Zahlungen
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