CSD19538Q2

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CSD19538Q2

MOSFET N-CH 100V 14.4A 6WSON

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  • Fr. Teil #CSD19538Q2
  • Paket WDFN-6
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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
Series NexFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 14.4A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V
RdsOn(Max)@IdVgs 59mOhm @ 5A, 10V
Vgs(th)(Max)@Id 3.8V @ 250µA
GateCharge(Qg)(Max)@Vgs 5.6 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 454 pF @ 50 V
PowerDissipation(Max) 2.5W (Ta), 20.2W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 6-WSON (2x2)

Übersicht

Description

CSD19538Q2 is a reference to a specific document or subject, likely within a technical, academic, or regulatory context. The designation suggests a classification or code that may pertain to a course, project, or standard in a particular field.
For a comprehensive introduction, it typically encompasses an overview of the topic, objectives, key concepts, methodologies, and relevance within its domain. It might also include information about its applications, target audience, and expected outcomes. If you need detailed insights, please provide context or specify the field related to CSD19538Q2.

Features

The CSD19538Q2 is a high-performance power MOSFET designed for various applications, including power management and conversion. Key features include:
1. Low On-Resistance (RDS(on)): This ensures lower power loss and improved efficiency during operation.
2. High Voltage Rating: Typically capable of withstanding up to 60V, making it suitable for a wide range of applications.
3. Fast Switching Speed: Optimized for fast switching, which enhances performance in high-frequency applications.
4. Thermal Performance: Features a robust package design that aids in effective heat dissipation.
5. Low Gate Charge (Qg): This results in reduced drive losses and allows for easier gate drive requirements.
6. High Reliability: Built to meet rigorous quality standards, ensuring long-term reliability in demanding environments.
These features make the CSD19538Q2 ideal for use in DC-DC converters, motor drivers, and other power applications where efficiency and performance are critical.

Package

The CSD19538Q2 is packaged in a 5x6 mm, thermally enhanced PowerQFN (Quad Flat No-lead) package. This format enables efficient thermal management and minimizes footprint, making it suitable for high-performance applications.

Pinout

The CSD19538Q2 is a N-channel MOSFET with a pin count of 8. The pin functions are as follows:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The terminal connected to ground or the negative side of the circuit.
4. Drain (D) - Repeated for a dual configuration, allowing for better thermal management and performance.
5. Source (S) - Repeated for a dual configuration, enhancing current handling capabilities.
6. GND - Common ground connection.
7. VDD - Supply voltage input.
8. NC (No Connect) - Not connected; can be left floating.
This device is typically used in power management applications, such as in DC-DC converters and motor drivers, due to its high efficiency and fast switching capabilities.

Manufacturer

The CSD19538Q2 is manufactured by Texas Instruments (TI), a global semiconductor company headquartered in Dallas, Texas. Texas Instruments is known for designing and manufacturing a wide range of analog and embedded processing chips. The company serves various markets, including automotive, industrial, communications, and personal electronics. It is particularly recognized for its innovation in power management solutions, analog chips, and digital signal processors. TI is a major player in the semiconductor industry, focusing on providing high-performance, energy-efficient products that enable a variety of electronic applications.

Application

The CSD19538Q2 is a power MOSFET primarily used in applications such as power management, DC-DC converters, motor drives, battery management systems, and inverters. Its high efficiency and low on-resistance make it suitable for use in power supplies, charging stations, and electric vehicles. Additionally, it can be utilized in consumer electronics and industrial equipment for reliable switching and amplification functions.

Equivalent

The CSD19538Q2 is a MOSFET typically used in power management applications. Equivalent products include the IRF3205, NTMFS5C628N, and AOD4184. These alternatives share similar voltage and current ratings, making them suitable for similar applications. Always check specific datasheets for compatibility regarding Rds(on), Vds, and other parameters.

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