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CSD19538Q3A
MOSFET N-CH 100V 15A 8VSON
- Hersteller
- Fr. Teil #CSD19538Q3A
- Paket PowerVDFN-8
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Spezifikationen
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | NexFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 15A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 6V, 10V |
| RdsOn(Max)@IdVgs | 59mOhm @ 5A, 10V |
| Vgs(th)(Max)@Id | 3.8V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 4.3 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 454 pF @ 50 V |
| PowerDissipation(Max) | 2.8W (Ta), 23W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-VSONP (3x3.3) |
Übersicht
Description
Typically, such identifiers include details about the product’s characteristics, including voltage ratings, current handling, package type, and technology used. For precise information, one would typically refer to the manufacturer's datasheet or technical documentation, which outlines the component's specifications, performance parameters, and application guidelines.
If you have a specific context or application in mind, please provide more details for a more tailored response.
Features
1. Type: N-channel MOSFET.
2. Voltage Rating: 30V, suitable for low-voltage applications.
3. Current Rating: Capable of handling high continuous drain currents, making it ideal for demanding applications.
4. R_DS(on): Low on-resistance (typically around 5.8 mΩ), which enhances efficiency by reducing power losses during operation.
5. Fast Switching Speed: Optimized for fast switching, improving performance in DC-DC converters and other high-frequency applications.
6. Thermal Performance: Designed with a low thermal resistance, allowing for better heat dissipation and reliability.
7. Package: Available in a compact QFN (Quad Flat No-lead) package, facilitating easier integration into designs with limited space.
These features make the CSD19538Q3A suitable for applications such as power supplies, battery management systems, and motor drivers.
Package
Pinout
1. Gate (G) - Controls the MOSFET; applying a voltage here turns the device on or off.
2. Source (S) - The terminal through which current leaves the MOSFET when it is in the "on" state.
3. Drain (D) - The terminal through which current enters the MOSFET when it is conducting.
4. Tab/Drain (D) - This is also the drain connection, typically connected to a heat sink for thermal management.
5. Body Diode (internal) - Not a pin, but it's important to note that this device has an intrinsic body diode that provides reverse current capability.
The CSD19538Q3A is designed for high-efficiency applications in power management, providing low on-resistance and fast switching.
Manufacturer
Application
Equivalent
Versand
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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
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3. Überweisung
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