CY62157EV30LL-45BVXIT

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CY62157EV30LL-45BVXIT

SRAM - ASYNCHRONOUS MEMORY IC 8M

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Spezifikationen

Series MOBL™
Part Status Active
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Asynchronous
Memory Size 8Mbit
Memory Organization 512K x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 45ns
Voltage - Supply 2.2V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 48-VFBGA
Supplier Device Package 48-VFBGA (6x8)
Base Product Number CY62157
Access Time 45 ns

Übersicht

Description

The CY62157EV30LL-45BVXIT is a high-performance static random-access memory (SRAM) device from Cypress Semiconductor, designed for applications requiring fast and reliable memory solutions. It features a density of 4 megabits (512K x 8 bits) and operates with a low supply voltage of 3.0V to 3.6V, making it suitable for portable and battery-powered devices.
Key characteristics include a fast access time of 45 ns, low power consumption, and a simple interface, allowing for easy integration into various digital systems. It supports both asynchronous read and write operations, facilitating efficient data handling. Additionally, the device is available in a compact, lead-free package, enhancing its compatibility with modern electronics.
The CY62157EV30LL-45BVXIT is ideal for applications such as telecommunications, automotive systems, industrial control, and consumer electronics, where speed and reliability are crucial. Its robust features and specifications make it a popular choice among engineers and designers seeking efficient memory solutions.

Features

The CY62157EV30LL-45BVXIT is a high-performance CMOS static RAM (SRAM) with several key features:
1. Memory Size: It offers a density of 1 Mbit (128K x 8 bits).
2. Access Time: The part features a fast access time of 45 ns, enabling quick data retrieval.
3. Low Voltage Operation: It operates at a supply voltage of 2.7V to 3.6V, making it suitable for low-power applications.
4. Low Power Consumption: The SRAM is designed for low power dissipation, which is advantageous for battery-operated devices.
5. Asynchronous Operation: It allows for simple interfacing without the need for external clock signals, facilitating easy integration into various designs.
6. Byte-Writable: Supports byte-write capability, providing flexibility in data manipulation.
7. Industrial Temperature Range: The device is rated for operation in extended temperature ranges, making it suitable for harsh environments.
These features make the CY62157EV30LL-45BVXIT ideal for applications in telecommunications, consumer electronics, and automotive systems.

Package

The CY62157EV30LL-45BVXIT comes in a 48-pin TSOP II (Thin Small Outline Package) package type. This package is designed for space efficiency and is commonly used in memory devices.

Pinout

The CY62157EV30LL-45BVXIT is a 16-megabit (1M x 16) asynchronous SRAM with a pin count of 44. It features a 3.0V supply voltage and operates at a access time of 45 ns.
The main functions of its pins include:
- Data Inputs/Outputs (DQ0-DQ15): These are the 16 data lines used for reading and writing data.
- Address Inputs (A0-A19): These lines are used to select the memory address for accessing stored data.
- Chip Enable (CE): This pin must be active for the chip to function.
- Output Enable (OE): This pin controls the output drivers; data is output only when OE is asserted.
- Write Enable (WE): This pin controls write operations; data is written to the memory when asserted.
- Byte Enable (BE): This controls the individual byte access, allowing selective writing/reading of data.
The package type is a 44-pin TSOP (Thin Small Outline Package).

Manufacturer

The manufacturer of the CY62157EV30LL-45BVXIT is Cypress Semiconductor Corporation, which is now part of Infineon Technologies AG following its acquisition in 2020. Cypress specializes in designing and manufacturing a wide range of semiconductor products, including memory solutions, microcontrollers, and connectivity solutions. The company is well-known for its flash memory and SRAM products, catering to various applications in consumer electronics, automotive, industrial, and embedded systems. Infineon, the parent company, is a global leader in semiconductor solutions, focusing on providing innovations for energy-efficient systems, mobility, and security.

Application

The CY62157EV30LL-45BVXIT is a 4-Mbit (512K x 8) static RAM, suitable for various applications including:
1. Cache Memory: Enhancing CPU performance.
2. Embedded Systems: Used in microcontrollers and DSPs.
3. Networking Equipment: For temporary data storage.
4. Consumer Electronics: In devices like TVs and gaming consoles.
5. Industrial Applications: Data buffering and processing.
Its low power consumption and high-speed access make it ideal for these areas.

Equivalent

Equivalent products to the CY62157EV30LL-45BVXIT chip include the IS61WV51216BLL-45TLI, MT48LC4M16A2P-75, and the K4S641632D-TC75. These chips offer similar specifications in terms of memory type, density, and access speed. Always verify compatibility with your specific application before substituting components.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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