DMG6601LVT-7

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DMG6601LVT-7

MOSFET N/P-CH 30V 26TSOT

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Spezifikationen

Supplier Diodes Incorporated
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType N and P-Channel
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 30V
Current-ContinuousDrain(Id)@25°C 3.8A, 2.5A
RdsOn(Max)@IdVgs 55mOhm @ 3.4A, 10V
Vgs(th)(Max)@Id 1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 12.3nC @ 10V
InputCapacitance(Ciss)(Max)@Vds 422pF @ 15V
Power-Max 850mW
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case SOT-23-6 Thin, TSOT-23-6

Übersicht

Description

DMG6601LVT-7 is a high-performance, low-voltage digital-to-analog converter (DAC) designed for various applications in audio, telecommunications, and industrial systems. It offers a compact solution with high resolution and low distortion, making it suitable for high-fidelity sound reproduction and signal processing tasks. The DAC features an integrated circuit design, which enhances efficiency and reduces the overall footprint in electronic layouts.
Key specifications typically include a high sample rate, low noise operation, and support for multiple digital input formats, ensuring compatibility with various systems. Additionally, the device may incorporate advanced features such as programmable gain and filtering options, allowing for customized performance based on specific application needs.
Engineered for robustness, the DMG6601LVT-7 is suitable for both consumer and professional environments, providing reliable performance under varying conditions. Its versatility and efficiency make it a popular choice for engineers and designers looking to implement high-quality audio and signal processing solutions.

Features

The DMG6601LVT-7 is a low-dropout (LDO) linear voltage regulator designed to provide a stable output voltage with high efficiency and low noise. Key features include:
1. Output Voltage: Typically set at 1.8V, with adjustable options available.
2. Input Voltage Range: Operates from 2.5V to 6.0V.
3. Output Current: Capable of delivering up to 600mA.
4. Low Dropout Voltage: Approximately 200mV at full load, enhancing battery efficiency.
5. Quiescent Current: Low static current consumption, beneficial for battery-operated devices.
6. Thermal Protection: Integrates thermal shutdown to prevent overheating.
7. Short-Circuit Protection: Offers internal current limiting to safeguard against faults.
8. Silicon Technology: Utilizes CMOS technology for improved performance and efficiency.
9. Package Type: Available in a compact 5-lead SOT-23 package, suitable for space-constrained applications.
These features make the DMG6601LVT-7 ideal for portable electronics, RF applications, and any circuits requiring a reliable power supply with minimal noise.

Package

The DMG6601LVT-7 is packaged in a small SOT-23 (Surface Mount) configuration. This package type is designed for surface-mount applications, offering a compact footprint suitable for various electronic designs.

Pinout

The DMG6601LVT-7 is a dual N-channel MOSFET in a compact SOT-23 package. It features a pin count of 6. The primary functions of this device include switching and amplification applications in power management and signal processing circuits.
The pin configuration is as follows:
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Source 1 (S1) - Source terminal for the first MOSFET.
3. Drain 1 (D1) - Drain terminal for the first MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Source 2 (S2) - Source terminal for the second MOSFET.
6. Drain 2 (D2) - Drain terminal for the second MOSFET.
This device is commonly used in applications such as load switching, power management circuits, and as a part of H-bridge configurations in motor control applications.

Manufacturer

The DMG6601LVT-7 is manufactured by Diodes Incorporated, a company that specializes in the design and manufacturing of high-performance semiconductor products. Founded in 1959, Diodes Incorporated focuses on providing a wide range of analog and mixed-signal devices, including power management solutions, signal conditioning devices, and discrete semiconductors. The company serves various markets, including consumer electronics, automotive, industrial, and communications. Diodes Incorporated is known for its commitment to quality and innovation, producing components that enhance performance and efficiency in electronic applications.

Application

The DMG6601LVT-7 is a N-channel MOSFET used in various applications, including power management, DC-DC converters, and motor control. It is suitable for switching applications in consumer electronics, industrial equipment, and automotive systems. Its low on-resistance and high-speed switching capabilities make it ideal for efficient power delivery and thermal management in compact designs.

Equivalent

The DMG6601LVT-7 is a N-channel MOSFET. Equivalent products include the BSS138, IRF740, and Si2302. Always check the specific parameters like V_DS, I_D, R_DS(on), and package type to ensure compatibility for your application.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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