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DMN3065LW-7
MOSFET N-CH 30V 4A SOT-323
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- Fr. Teil #DMN3065LW-7
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- Datenblatt DMN3065LW-7 DataSheet
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Spezifikationen
| Supplier | Diodes Incorporated |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 4A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 2.5V, 10V |
| RdsOn(Max)@IdVgs | 52mOhm @ 4A, 10V |
| Vgs(th)(Max)@Id | 1.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 11.7 nC @ 10 V |
| Vgs(Max) | ±12V |
| InputCapacitance(Ciss)(Max)@Vds | 465 pF @ 15 V |
| PowerDissipation(Max) | 770mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-323 |
Übersicht
Description
The device features a low gate threshold voltage, enabling efficient operation at lower voltage levels. Its compact package makes it ideal for space-constrained applications while ensuring effective thermal management. The DMN3065LW-7 is often favored in designs requiring high efficiency and reliability. Additionally, it is compatible with standard gate drive circuits, making integration into existing systems straightforward. Overall, this MOSFET is a versatile choice for engineers seeking high-performance solutions in electronic circuits.
Features
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 30V, suitable for low voltage applications.
2. Current Rating: The device can handle a continuous drain current (Id) of up to 65A, allowing efficient power handling.
3. RDS(on): The on-resistance is low, typically around 10 mΩ, which minimizes power loss during operation.
4. Package Type: It comes in a DPAK package, providing a compact footprint and efficient thermal performance.
5. Fast Switching: The device is designed for fast switching applications, enhancing efficiency in power management circuits.
6. Applications: Commonly used in power conversion, motor control, and battery management systems.
Overall, the DMN3065LW-7 is favored for its reliability, efficiency, and suitability for high-performance applications in consumer electronics and industrial devices.
Package
Pinout
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): Connects to the load and allows current to flow when the MOSFET is on.
3. Source (S): The terminal through which current exits the MOSFET when it is on.
The MOSFET is designed for switching and amplifying applications, with a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of 19A. It features low on-resistance, making it suitable for power management in various electronic devices.
For further details, refer to the manufacturer's datasheet.
Manufacturer
Application
Equivalent
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Zahlungen
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