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DMN65D8LDW-7
MOSFET 2N-CH 60V 0.18A SOT363
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- Fr. Teil #DMN65D8LDW-7
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- Datenblatt DMN65D8LDW-7 DataSheet
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Spezifikationen
| Part Status | Active |
| Base Product Number | DMN65 |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 180mA |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 115mA, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.87nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 22pF @ 25V |
| Power - Max | 300mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SOT-363 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Übersicht
Description
Key specifications include a high voltage rating and a low threshold voltage, which allows for effective operation in modern electronic designs. The package design often aids in thermal management, ensuring reliable performance under load.
The DMN65D8LDW-7 is popular among engineers for its performance characteristics and reliability, making it a valuable component in both consumer electronics and industrial applications. When integrating this MOSFET into a circuit, consider factors such as gate drive requirements, thermal dissipation, and load characteristics to ensure optimal performance.
Features
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 65V, making it suitable for various power management applications.
2. Current Rating: Capable of handling continuous drain current (I_D) of up to 8A, allowing for robust performance in load management.
3. Low On-Resistance: Offers a low R_DS(on) value, which minimizes energy loss and heat generation during operation, improving overall efficiency.
4. Fast Switching Speed: Designed for rapid switching applications, ideal for converters and inverters in power supply circuits.
5. Thermal Performance: Features a high thermal stability and can operate in a range of temperatures, enhancing reliability in demanding conditions.
6. Package Type: Typically available in a compact surface-mount package, facilitating easy integration into circuit designs.
These features make the DMN65D8LDW-7 suitable for applications such as power supplies, motor drivers, and other switching applications.
Package
Pinout
1. Gate 1 - Controls the first N-channel MOSFET.
2. Source 1 - Source terminal for the first MOSFET.
3. Drain 1 - Drain terminal for the first MOSFET.
4. Gate 2 - Controls the second N-channel MOSFET.
5. Source 2 - Source terminal for the second MOSFET.
6. Drain 2 - Drain terminal for the second MOSFET.
7. Common Source - Shared source connection for both MOSFETs (if applicable).
8. Common Drain - Shared drain connection for both MOSFETs (if applicable).
This device is often used in power management applications due to its low on-resistance and efficient performance.
Manufacturer
Application
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