FCD5N60TM

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FCD5N60TM

MOSFET N-CH 600V 4.6A DPAK

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Spezifikationen

Series SuperFET™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 950mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 25 V
Power Dissipation (Max) 54W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Base Product Number FCD5N60

Übersicht

Description

The FCD5N60TM is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. It features a voltage rating of 600 volts and a continuous drain current of 5 amps, making it suitable for use in power supplies, motor control, and other electronic applications requiring efficient switching.
Key specifications include low on-resistance, which minimizes power loss during operation, and fast switching speeds, enhancing overall system efficiency. The FCD5N60TM is typically housed in a TO-220 package, allowing for effective heat dissipation.
This MOSFET is ideal for applications in energy conversion, such as inverters and converters, as well as for use in lighting control and other power management systems. Its robust design ensures reliability in various environments, making it a popular choice among electronics engineers and designers.

Features

The FCD5N60TM is a N-channel MOSFET designed for high-voltage applications. Key features include:
1. Voltage Rating: Capable of withstanding a drain-source voltage (V_DS) of 600V, making it suitable for high-voltage switching.
2. Current Rating: Supports continuous drain current (I_D) of up to 5A, allowing it to handle significant loads.
3. On-Resistance (R_DS(on)): Low on-resistance, typically around 0.6Ω at V_GS of 10V, ensuring efficient operation and reduced heat generation.
4. Gate Threshold Voltage (V_GS(th)): Typically ranges from 2-4V, enabling easier drive requirements.
5. Switching Speed: Fast switching capabilities, ideal for applications requiring high efficiency.
6. Package Type: Available in TO-220 package, facilitating good thermal performance and easy heat dissipation.
7. Applications: Commonly used in power supplies, motor drives, and various high-voltage switching applications.
These features make the FCD5N60TM a reliable choice for power management and control in electronic circuits.

Package

The FCD5N60TM is typically packaged in a TO-220 form factor. This package type is known for its excellent thermal performance and easy mounting, making it suitable for power applications in electronic circuits.

Pinout

The FCD5N60TM is a N-channel MOSFET transistor with a total of 3 pins. Its pin configuration is as follows:
1. Gate (G) - This is the control terminal that modulates the conductivity between the drain and source.
2. Drain (D) - This terminal is connected to the load and is where the current exits the MOSFET.
3. Source (S) - This terminal is connected to the ground or negative side of the circuit, allowing current to flow from drain to source when the gate is activated.
The FCD5N60TM is designed for high-voltage applications, featuring a maximum voltage rating of 600V and a maximum continuous drain current of 5A. It is commonly used in switching applications and power management systems.

Manufacturer

The FCD5N60TM is manufactured by Fairchild Semiconductor, which is a company known for producing a wide range of semiconductor devices. Established in 1950, Fairchild Semiconductor specializes in power management, analog, and discrete devices. They are particularly recognized for their innovations in power transistors, integrated circuits, and other electronic components that are essential for various applications in consumer electronics, industrial systems, and automotive sectors. Fairchild has a focus on providing high-performance solutions that enhance energy efficiency and reliability, making it a key player in the semiconductor industry.

Application

The FCD5N60TM is a power MOSFET commonly used in applications such as switch-mode power supplies, DC-DC converters, and motor control circuits. Its high voltage and current handling capabilities make it suitable for industrial automation, lighting control, and power management in renewable energy systems. Additionally, it is utilized in consumer electronics for efficient power switching and regulation.

Equivalent

The FCD5N60TM is a N-channel MOSFET. Equivalent products include the IRF640, STP5NK60Z, and MTP5N60E. Always verify specifications like voltage, current ratings, and package type when substituting components.

Versand

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UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

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