FCD600N60Z

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FCD600N60Z

MOSFET N-CH 600V 7.4A DPAK

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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
Series SuperFET® II
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 7.4A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 600mOhm @ 3.7A, 10V
Vgs(th)(Max)@Id 3.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 26 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1120 pF @ 25 V
PowerDissipation(Max) 89W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-252AA

Übersicht

Description

The FCD600N60Z is a high-performance MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It is part of the FCD series, featuring a voltage rating of 600V and a current rating of 60A, making it suitable for high-voltage, high-current applications such as power supplies, motor drives, and inverters.
Key features include low on-resistance (RDS(on)), which reduces power losses and enhances efficiency, particularly in switching applications. The device is typically housed in a TO-247 package, facilitating efficient thermal management.
Its fast switching capabilities make it ideal for use in applications requiring rapid response times. The FCD600N60Z also offers robust performance with a high temperature tolerance, ensuring reliability in demanding environments.
Overall, this MOSFET is a reliable choice for engineers seeking efficiency and performance in high-power electronic designs.

Features

The FCD600N60Z is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling continuous drain current (I_D) of up to 600A, suitable for high-current applications.
3. Low On-Resistance (R_DS(on)): Offers a low on-resistance, which minimizes power losses during operation, enhancing efficiency.
4. Fast Switching Speed: Designed for rapid switching, improving performance in high-frequency applications.
5. Thermal Performance: Equipped with a robust thermal design, allowing for efficient heat dissipation.
6. Package Type: Typically available in a TO-247 or similar package, facilitating easy mounting and heat sinking.
7. Applications: Ideal for use in power supplies, motor drives, converters, and other industrial applications.
The combination of these features makes the FCD600N60Z a versatile choice for demanding electronic designs.

Package

The FCD600N60Z is typically packaged in a TO-247 format. This package type is designed for high power applications, providing good thermal performance and ease of mounting on heatsinks.

Pinout

The FCD600N60Z is a N-channel MOSFET used primarily for power management applications. It has a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G): Controls the MOSFET's switching, allowing it to turn on and off.
2. Drain (D): The terminal where the load is connected; current flows from the drain to the source when the device is on.
3. Source (S): The terminal that connects to ground or the lower potential in a circuit.
4. Body (B): Typically internally connected to the source, serves as the substrate for the MOSFET.
This device is designed for high-voltage applications, and its specifications make it suitable for various switching and amplification tasks in power electronics.

Manufacturer

The FCD600N60Z is manufactured by Fairchild Semiconductor, which is a global company specializing in the design and production of semiconductor technology. Fairchild is recognized for its innovative products in the fields of power management, analog, and discrete semiconductors. The company focuses on delivering solutions for various applications, including consumer electronics, automotive, communications, and industrial sectors. Fairchild Semiconductor was founded in 1957 and has since become a significant player in the semiconductor industry. In 2016, it was acquired by ON Semiconductor, further expanding its reach and capabilities in the market.

Application

The FCD600N60Z is a high-voltage N-channel MOSFET primarily used in power electronics applications. Its key areas include switch-mode power supplies (SMPS), motor drives, and inverters for renewable energy systems. Additionally, it is suitable for DC-DC converters, industrial power management, and various consumer electronics, where efficient power switching and thermal performance are critical.

Equivalent

The FCD600N60Z is a power MOSFET, commonly used in various applications. Equivalent products include the STP600N60M2, IRF600, NTP600N60, and FQP600N60. Always check the specific datasheets for parameters like voltage, current ratings, Rds(on), and package type to ensure compatibility for your application.

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