FCP190N60E

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FCP190N60E

MOSFET N-CH 600V 20.6A TO220-3

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Spezifikationen

Series SuperFET® II
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 20.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 82 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3175 pF @ 25 V
Power Dissipation (Max) 208W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Base Product Number FCP190

Übersicht

Description

The FCP190N60E is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance applications. It features a voltage rating of 600V and a current rating of 190A, making it suitable for applications such as power supplies, motor drives, and automotive systems.
Key specifications include low on-state resistance (R_DS(on)), which enhances efficiency by reducing power loss during operation. The FCP190N60E also has fast switching capabilities, allowing for quick response times in high-frequency applications. Its robust construction ensures reliability in demanding environments, making it ideal for industrial and consumer electronics.
These characteristics make the FCP190N60E a popular choice for engineers seeking reliable, efficient solutions in power management and conversion applications. It is important to review the datasheet for detailed electrical characteristics and thermal management guidelines to ensure optimal performance in specific circuit designs.

Features

The FCP190N60E is a high-performance N-channel MOSFET designed for power switching applications. Key features include:
1. Voltage Rating: 600V, suitable for high-voltage applications.
2. Current Rating: Can handle continuous drain current up to 190A, ideal for heavy load conditions.
3. R_DS(on): Low on-resistance (typically around 0.19 ohms), which reduces conduction losses and improves efficiency.
4. Gate Threshold Voltage (V_gs(th)): Typically low, allowing for easy drive requirements.
5. Fast Switching Speed: Optimized for high-frequency applications, reducing switching losses.
6. Thermal Resistance: Good thermal performance, ensuring reliable operation under various conditions.
7. Package Type: Available in a TO-247 package, which aids in effective heat dissipation.
Overall, the FCP190N60E is suitable for applications in power supplies, motor drives, and other areas requiring efficient and reliable power management solutions.

Package

The FCP190N60E is a power MOSFET typically packaged in an N-Channel TO-220 format. This type of package is designed for efficient heat dissipation and is commonly used in power applications.

Pinout

The FCP190N60E is an N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's switching on and off.
2. Drain (D): The terminal through which current exits when the MOSFET is turned on.
3. Source (S): The terminal through which current enters when the MOSFET is conducting.
This device is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 190A. It is commonly used in power management, inverter applications, and other high-power electronic circuits.

Manufacturer

The FCP190N60E is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor Corporation. Fairchild Semiconductor was known for its production of high-performance semiconductor solutions, particularly in power management, analog, and mixed-signal applications. The company has a strong focus on innovation and technology, catering to various industries, including automotive, industrial, telecommunications, and consumer electronics. After being acquired by ON Semiconductor in 2016, it continued to play a significant role in the semiconductor market, providing essential components for a range of applications.

Application

The FCP190N60E is a 600V, 190A N-channel MOSFET widely used in power electronics applications, including industrial motor drives, switch-mode power supplies, renewable energy systems (like solar inverters), and electric vehicles. Its high efficiency and fast switching capabilities make it suitable for high-power and high-frequency applications, enhancing performance in converters and inverters.

Equivalent

The FCP190N60E is a power MOSFET from Fairchild Semiconductor. Equivalent products include:
1. IRF2804 (Infineon)
2. STP190N60M2 (STMicroelectronics)
3. APT190N60 (APT)
4. FDP190N60 (ON Semiconductor)
Ensure to check datasheets for specific parameters like Rds(on), Vds, and package type for compatibility.

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