FCPF190N60E

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FCPF190N60E

MOSFET N-CH 600V 20.6A TO220F

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  • Fr. Teil #FCPF190N60E
  • Paket TO-220F-3
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Spezifikationen

Package Tube
Series SuperFET® II
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 20.6A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 190mOhm @ 10A, 10V
Vgs(th)(Max)@Id 3.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 82 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 3175 pF @ 25 V
PowerDissipation(Max) 39W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220F-3

Übersicht

Description

FCPF190N60E is a specific model of a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by ON Semiconductor. This device is designed for high-efficiency switching applications, commonly used in power management circuits, converters, and motor control systems. The "FCPF" designation indicates it is a part of the Fast Switching family of power MOSFETs, while "190" refers to its maximum continuous drain current rating (190A), and "60" denotes its maximum drain-source voltage (60V). The "N" signifies that it is an N-channel MOSFET, which typically offers better performance for high-side switching applications compared to P-channel devices. The "E" at the end of the model number indicates specific package and thermal characteristics. Key features include low on-resistance, fast switching speeds, and thermal stability, making it suitable for demanding applications where efficiency and reliability are crucial. Proper thermal management and circuit design are essential to maximize the performance and lifespan of the FCPF190N60E in its applications.

Features

The FCPF190N60E is a high-performance N-channel MOSFET designed for efficient power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle continuous drain current (I_D) of up to 190A, allowing it to manage substantial loads.
3. On-resistance: It boasts a low on-resistance (R_DS(on)) which reduces power losses and enhances efficiency during operation.
4. Fast Switching: The MOSFET offers fast switching capabilities, which is beneficial for applications like power conversion and motor control.
5. Thermal Performance: With a robust thermal resistance, it can operate effectively at high temperatures, ensuring reliability.
6. TO-220 Package: The device is typically available in a TO-220 package, facilitating easy heat dissipation and mounting.
These features make the FCPF190N60E suitable for various applications, including power supplies, automotive systems, and industrial equipment.

Package

The FCPF190N60E is packaged in a TO-247 form factor. This package type is designed for high-power applications, featuring a robust structure that allows for efficient heat dissipation.

Pinout

The FCPF190N60E is a 600V N-channel MOSFET with a pin count of 3. The pins are typically designated as follows:
1. Gate (G): This pin controls the MOSFET's operation. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the current enters the MOSFET. It connects to the load and allows for the control of current flow.
3. Source (S): This pin is the output of the MOSFET, providing a path for the current to exit to ground or the circuit.
The FCPF190N60E is designed for high-efficiency applications in power conversion and switching, featuring low on-resistance and fast switching capabilities.

Manufacturer

The FCPF190N60E is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor following its acquisition. Fairchild Semiconductor was known for its expertise in power management and analog devices, focusing on semiconductors for various applications, including automotive, industrial, and consumer electronics. The FCPF190N60E is a power MOSFET designed for high-efficiency switching applications, particularly in power supplies and converters. ON Semiconductor continues to provide a wide range of semiconductor solutions, emphasizing energy efficiency and sustainable practices.

Application

The FCPF190N60E is a high-voltage IGBT (Insulated Gate Bipolar Transistor) used in various applications, including industrial motor drives, renewable energy systems (like wind and solar inverters), power supplies, and induction heating. Its ability to handle high voltage and current makes it suitable for applications requiring efficient power conversion and management in electric vehicles, rail traction, and other power electronics systems.

Equivalent

The FCPF190N60E is a 600V N-channel MOSFET. Equivalent products include the IRFHC190N60, STP190N60, and FDP190N60. Always verify specifications such as Rds(on), gate charge, and maximum ratings for compatibility in your application.

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