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FDA70N20
MOSFET N-CH 200V 70A TO3PN
- Hersteller
- Fr. Teil #FDA70N20
- Paket TO-3PN-3
- Datenblatt FDA70N20 DataSheet
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Spezifikationen
| Package | Tube |
| Series | UniFET™ |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 70A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 35mOhm @ 35A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 86 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 3970 pF @ 25 V |
| PowerDissipation(Max) | 417W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-3PN |
Übersicht
Description
For precise information about FDA70N20, including its implications, requirements, or related products, one would need to refer directly to FDA resources or official documentation.
Features
1. Voltage Rating: Typically rated for a maximum drain-source voltage (V_DS) of 70V, making it suitable for medium-voltage applications.
2. Current Handling: Capable of handling a continuous drain current (I_D) of up to 20A, providing robustness for high-load scenarios.
3. Low R_DS(on): Features a low on-resistance, enhancing efficiency by reducing conduction losses during operation.
4. Fast Switching Speed: Enables rapid switching, which is crucial for effective power conversion and minimal heat generation.
5. Thermal Management: Designed with a low thermal resistance, allowing effective heat dissipation and improved reliability in demanding environments.
6. Package Options: Available in various packaging, such as TO-220 or DPAK, facilitating flexible integration into different circuit designs.
These features make the FDA70N20 an excellent choice for engineers seeking reliable, efficient, and high-performance solutions in power electronics.
Package
Pinout
1. Gate (G): This pin controls the MOSFET's operation by applying a voltage; when voltage is applied, it allows current to flow from drain to source.
2. Drain (D): The drain pin is where the main current enters the MOSFET from the power source or load.
3. Source (S): The source pin is where the current exits the MOSFET to return to the circuit ground.
The FDA70N20 is designed for high voltage and current applications, with a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of 70A, making it suitable for power supply circuits and motor control applications.
Manufacturer
Application
Equivalent
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Zahlungen
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