FDB024N08BL7

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FDB024N08BL7

MOSFET N-CH 80V 120A TO263-7

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Spezifikationen

Series PowerTrench®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 178 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 13530 pF @ 40 V
Power Dissipation (Max) 246W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263-7
Package / Case TO-263-7, D2PAK (6 Leads + Tab)
Base Product Number FDB024

Übersicht

Description

FDB024N08BL7 is a specific part number for a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), which is an electronic component widely used for switching and amplifying signals in electronic devices. This particular model is manufactured by ON Semiconductor, now known as onsemi, a company well-regarded for producing semiconductors for power and signal management, logic, discrete, and custom devices.
The FDB024N08BL7 is typically used in applications requiring efficient power management, such as power supplies, motor controls, and other high-performance electronic applications. It features low on-resistance and high-speed switching capability, which makes it suitable for improving energy efficiency and performance in electronic circuits.
Key specifications usually include maximum voltage and current ratings, gate charge, and thermal resistance, which determine its suitability for various applications. Being a part of onsemi’s portfolio, it benefits from the company’s emphasis on reliability and energy efficiency. For detailed specifications, datasheets from the manufacturer should be consulted.

Features

The FDB024N08BL7 is a power MOSFET typically used in electronic applications for switching and amplification purposes. Here are some of its key features:
1. N-Channel MOSFET: It is designed as an N-channel MOSFET, which is suited for high-speed switching.

2. Low On-Resistance: It features low on-resistance, which improves efficiency by reducing power loss during operation.
3. Voltage and Current Ratings: Suitable for handling a certain range of voltage and current, usually specified in its datasheet to ensure it fits application requirements.
4. Thermal Management: Often includes enhanced thermal characteristics to help dissipate heat effectively during high-load operations.
5. Compact Packaging: Available in a compact package that aids in efficient space utilization on circuit boards.
6. High-Speed Performance: Designed to support high-speed switching operations, making it ideal for fast-paced applications.
7. Rugged Construction: Built to withstand various electrical stresses, contributing to its reliability and longevity in demanding environments.
These features make the FDB024N08BL7 suitable for a wide range of applications, including power management systems, motor control, and other electronic circuits requiring efficient power switching.

Package

The package type for FDB024N08BL7 is a PowerPAK SO-8. This package is commonly used for MOSFETs, providing a compact and thermally efficient design suitable for high-performance applications.

Pinout

The FDB024N08BL7 is a N-channel MOSFET manufactured by ON Semiconductor. It typically comes in a D²PAK (TO-263) package, which generally has three pins plus a tab, serving as the fourth connection. Here's a concise breakdown of the pin functions:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here changes the conductive state of the device.
2. Drain (D): This is the pin that allows current to flow from the drain to the source when the MOSFET is in the "on" state.
3. Source (S): This pin serves as the return path for the current flowing through the device.
4. Tab (D): The metal tab on the package also serves as an additional connection to the drain and is usually used to mount the MOSFET to a heat sink for thermal management.
These MOSFETs are typically used in applications that require efficient switching and low on-resistance, such as power management in electronic devices.

Manufacturer

The FDB024N08BL7 is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that designs, develops, and produces a wide range of semiconductor solutions. The company is known for its innovations in the fields of automotive, industrial power control, power management, and digital security. Infineon's products are used in various applications, including energy-efficient technologies, automotive systems, communication devices, and security products. The company emphasizes sustainability and energy efficiency in its product development, aiming to address global challenges such as energy needs, environmental protection, and digital security.

Application

The FDB024N08BL7 is a MOSFET transistor commonly used in applications requiring efficient power management and switching. It is suitable for use in DC-DC converters, motor drives, and power supply circuits due to its low on-resistance and high-speed switching capabilities. Additionally, it can be found in automotive electronics, industrial systems, and consumer electronics where efficient load control and energy management are essential.

Equivalent

The FDB024N08BL7 is a power MOSFET. Equivalent products would be other MOSFETs with similar specifications, such as low Rds(on), similar voltage and current ratings. Possible equivalents could include models from manufacturers like Infineon, STMicroelectronics, or Texas Instruments that offer similar N-channel MOSFETs with comparable performance. However, check the datasheets for precise matching in terms of voltage, current, and thermal characteristics to ensure compatibility for your specific application.

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