FDB047N10

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FDB047N10

MOSFET N-CH 100V 120A D2PAK

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Spezifikationen

Supplier onsemi,Rochester Electronics, LLC
Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series PowerTrench®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 120A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 4.7mOhm @ 75A, 10V
Vgs(th)(Max)@Id 4.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 210 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 15265 pF @ 25 V
PowerDissipation(Max) 375W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D²PAK (TO-263)

Übersicht

Description

FDB047N10 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for applications requiring efficient switching and amplification of electrical signals. It typically features a breakdown voltage of 100V, a continuous drain current rating of 47A, and a low on-resistance, making it suitable for high-performance power management and conversion tasks.
Key specifications usually include a maximum gate-source voltage, a low total gate charge, and fast switching speeds, which enhance its performance in various applications such as power supplies, motor drivers, and inverters. The device is often packaged in a TO-220 or similar format, allowing for efficient thermal management.
Overall, the FDB047N10 is favored in designs where efficiency, thermal performance, and reliability are critical. Its versatility makes it a popular choice among engineers for a wide range of electronic applications.

Features

The FDB047N10 is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: 100V, suitable for high-voltage applications.
2. Continuous Drain Current: Up to 47A, allowing for substantial power handling.
3. RDS(on): Low on-resistance (typically around 0.047Ω), which reduces conduction losses and improves efficiency.
4. Gate Threshold Voltage: Low VGS(th) around 2-4V, enabling easy drive with standard logic levels.
5. Package Type: Available in TO-220 and DPAK packages, facilitating thermal management and ease of mounting.
6. Fast Switching Speed: Suitable for high-frequency applications, enhancing overall performance in switching circuits.
7. Thermal Resistance: Low thermal resistance ensures efficient heat dissipation.
These characteristics make the FDB047N10 ideal for applications in power supplies, motor drives, and other energy conversion systems.

Package

The FDB047N10 is typically packaged in a TO-220 or similar package type, which is a standard format for power MOSFETs. This package allows for efficient thermal management and is suitable for various applications in power electronics.

Pinout

The FDB047N10 is a N-channel MOSFET with a pin count of 5. The pin configuration and their functions are as follows:
1. Gate (G) - Controls the switching of the MOSFET; applying a voltage here allows current to flow between the drain and source.
2. Drain (D) - The terminal through which the current exits the MOSFET; connected to the load.
3. Source (S) - The terminal through which the current enters the MOSFET; typically connected to ground in low-side switching applications.
4. Body Diode (integrated) - Not a separate pin, but an intrinsic diode that allows current flow in the reverse direction (from source to drain) when the MOSFET is off.
5. Thermal/Heat sink pad - Often used for mounting and thermal management but not counted as a separate pin.
The FDB047N10 is designed for applications such as power management and switching regulators, with a maximum drain-source voltage of 100V and a continuous drain current rating of 47A.

Manufacturer

The FDB047N10 is manufactured by Fairchild Semiconductor, which is now a part of ON Semiconductor. Fairchild Semiconductor was known for its production of a wide range of semiconductor products, including power MOSFETs, diodes, and other components used in various electronic applications. The company specialized in providing solutions for power management, lighting, and other electronic systems. ON Semiconductor continues to develop and supply semiconductors for multiple markets, including automotive, industrial, and consumer electronics, focusing on energy efficiency and innovation in technology.

Application

FDB047N10 is a N-channel MOSFET commonly used in power management applications. Its primary application areas include DC-DC converters, power supplies, motor drives, and switching regulators. It is also suitable for high-efficiency power applications in consumer electronics, industrial equipment, and automotive systems due to its low on-resistance and fast switching capabilities.

Equivalent

The FDB047N10 is a power MOSFET commonly used in various applications. Equivalent products include the IRF320, STP40NF10, and BUK9YB25-100. Always check specific datasheets for exact specifications and suitability in your application.

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