FDB15N50

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FDB15N50

MOSFET N-CH 500V 15A D2PAK

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Spezifikationen

Supplier onsemi
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 500 V
Current-ContinuousDrain(Id)@25°C 15A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 380mOhm @ 7.5A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 41 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 1850 pF @ 25 V
PowerDissipation(Max) 300W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D²PAK (TO-263)

Übersicht

Description

The FDB15N50 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. It features a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) rating of 15A. With low on-resistance (R_DS(on)), it minimizes power loss during operation, making it suitable for use in power supplies, inverters, and motor drives.
The FDB15N50 operates efficiently in switching applications, offering fast switching speeds and thermal stability. It is housed in a TO-220 package, which allows for effective heat dissipation, enhancing its reliability in demanding environments. The device is characterized by its high switching performance and robustness, making it a popular choice among engineers for applications requiring reliable power management.
In summary, the FDB15N50 is a versatile, high-voltage MOSFET ideal for various electronic applications, providing efficiency and reliability in power conversion and control.

Features

The FDB15N50 is a power MOSFET from the N-channel series, designed for high-voltage applications. Its key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 500V, making it suitable for high-voltage circuits.
2. Current Rating: The device has a continuous drain current (I_D) rating of 15A, allowing it to manage significant loads.
3. Low On-Resistance: With a typical R_DS(on) of approximately 0.6 Ohms, it minimizes conduction losses, enhancing efficiency.
4. Fast Switching: The device supports fast switching speeds, making it suitable for applications like power supplies and converters.
5. Thermal Performance: It features a high thermal dissipation capability, with a maximum junction temperature of 150°C.
6. Package Type: Typically available in TO-220 or similar packages for easy mounting and heat management.
These attributes make the FDB15N50 ideal for use in power management, motor drives, and other high-performance electronic systems.

Package

The FDB15N50 is typically packaged in a TO-247 or similar package type, designed for high-power applications. This package allows for efficient heat dissipation and easy mounting on heatsinks, making it suitable for use in power electronics and industrial applications.

Pinout

The FDB15N50 is an N-channel MOSFET designed for power applications. It features a TO-220 package with a total of three pins.
1. Gate (G): This pin is used to control the MOSFET's switching operation. A voltage applied to the gate allows current to flow between the drain and the source.

2. Drain (D): This pin is where the load current flows into the MOSFET. It is connected to the higher voltage side of the circuit.

3. Source (S): This pin is the output where the current flows out of the MOSFET. It is typically connected to the ground or the lower voltage side of the circuit.
The FDB15N50 is rated for a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) of 15A, making it suitable for high-voltage and high-current applications.

Manufacturer

The FDB15N50 is manufactured by Fairchild Semiconductor, which is a company that specializes in semiconductor solutions. Fairchild Semiconductor, now a part of ON Semiconductor, produces a wide range of products including power management, signal conditioning, and analog solutions. The company primarily serves industries such as automotive, industrial, consumer electronics, and communications. Fairchild is known for its innovation in power devices, including transistors like the FDB15N50, which is a power MOSFET used in various electronic applications for efficient power management and switching.

Application

FDB15N50 is a N-channel MOSFET commonly used in power electronics applications. Its primary application areas include switch-mode power supplies, DC-DC converters, motor control circuits, and energy management systems. It is suitable for high-voltage applications, providing efficient switching and low conduction losses, making it ideal for use in industrial equipment, electric vehicles, and renewable energy systems.

Equivalent

The FDB15N50 is a N-channel MOSFET with a 500V rating and 15A current capacity. Equivalent products include:
1. IRF840
2. STP15NM50
3. MTP15N50
4. FQD15N50
5. HUF75639P3
Always verify specifications like RDS(on) and package type before substitution.

Versand

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