FDC6303N

Bilder sind nur zur Referenz

FDC6303N

MOSFET 2N-CH 25V 0.68A SSOT6

  • Hersteller
  • Fr. Teil #FDC6303N
  • Paket
  • Datenblatt
  • Auf Lager9453

100% Original und Neu

24 Stunden bereit zum Versand

365 Tage Garantie

RFQ & Erhalten Sie mehr Rabatte

Spezifikationen

Part Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 680mA
Rds On (Max) @ Id, Vgs 450mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V
Power - Max 700mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package SuperSOT™-6
Base Product Number FDC6303

Übersicht

Description

FDC6303N is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in power management applications. It features low on-resistance and high switching speeds, making it suitable for various applications, including power supplies, motor control, and DC-DC converters. The FDC6303N is known for its efficient performance, which helps reduce power loss and improve thermal management in electronic circuits.
Key specifications typically include a maximum drain-source voltage (V_DS) of around 30V, a continuous drain current (I_D) rating of approximately 33A, and a low gate threshold voltage (V_GS(th)). Its compact package often allows for easy integration into circuit designs, enhancing space efficiency.
Overall, the FDC6303N is favored for its reliability and efficiency, making it a popular choice among engineers and designers in the electronics industry.

Features

The FDC6303N is a N-channel MOSFET designed for low voltage, high-speed switching applications. Key features include:
1. VDS Rating: Typically around 30V, making it suitable for various low-voltage applications.
2. ID Rating: Offers a continuous drain current of 18A, maximizing power handling capabilities.
3. RDS(on): Low on-resistance (approximately 0.04 ohms), ensuring minimal power loss and high efficiency during operation.
4. Gate Threshold Voltage: Typically ranges between 1.0V and 2.5V, allowing for easy interfacing with low-voltage logic levels.
5. Fast Switching Speed: Designed for high-frequency applications, with a low gate charge that enables quick turn-on and turn-off times.
6. Thermal Characteristics: Features robust thermal performance, with a TO-220 package that aids in heat dissipation.
7. Applications: Commonly used in DC-DC converters, motor drivers, and power management systems.
Overall, the FDC6303N is suitable for a variety of electronic applications where efficiency and thermal performance are critical.

Package

The FDC6303N is typically available in a 2x2 mm, 8-pin DFN (Dual Flat No-lead) package. This compact form factor is designed for efficient thermal and electrical performance in various applications.

Pinout

The FDC6303N is a dual N-channel MOSFET with a pin count of 8. Its primary function is to provide efficient switching capabilities in power management applications, such as DC-DC converters and motor control. The device features low on-resistance, making it suitable for applications requiring high efficiency.
The pin configuration typically includes:
1. Gate 1 (G1)
2. Drain 1 (D1)
3. Source 1 (S1)
4. Gate 2 (G2)
5. Drain 2 (D2)
6. Source 2 (S2)
7. Drain (Common)
8. Source (Common)
The FDC6303N can switch high currents and voltages, thus making it ideal for use in power management circuits. Always refer to the specific datasheet for detailed electrical characteristics and pin assignments.

Manufacturer

The FDC6303N is manufactured by Fairchild Semiconductor, a company that specializes in providing high-performance semiconductor solutions. Fairchild Semiconductor, which is now part of ON Semiconductor Corporation, focuses on various technologies including power management, signal management, and discrete components. The company serves multiple industries such as automotive, industrial, and consumer electronics, delivering innovative solutions for power efficiency and performance.

Application

The FDC6303N is a dual N-channel MOSFET designed for applications such as power management, motor control, DC-DC converters, and load switching in various electronic devices. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency power systems, including battery-powered devices and portable electronics.

Equivalent

The FDC6303N is a dual N-channel MOSFET. Equivalent products include the BSS138, SI2302, and BSS123 for lower power applications. For higher current ratings, consider the AO3400 and IRF3708. Always check datasheets for specific electrical characteristics to ensure compatibility.

Versand

VersandmethodenWir

bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.


Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

Payment Methods

Die Zahlungsfrist ist 100% Prepaid.

Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:

1. PayPal

2. Kredit- / Debitkarte

3. Überweisung

Ähnliche