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FDC638P
MOSFET P-CH 20V 4.5A SUPERSOT6
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- Fr. Teil #FDC638P
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- Datenblatt FDC638P DataSheet
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Spezifikationen
| Series | PowerTrench® |
| Part Status | Active |
| Base Product Number | FDC638 |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 48mOhm @ 4.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 1160 pF @ 10 V |
| Power Dissipation (Max) | 1.6W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SuperSOT™-6 |
| Package | SOT-23-6 Thin, TSOT-23-6 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Übersicht
Description
Key specifications often include a maximum drain-source voltage (V_DS), a high continuous drain current (I_D), and a low gate threshold voltage (V_GS(th)). The FDC638P is frequently utilized in consumer electronics, automotive, and industrial applications where reliable power delivery is critical. Its enhanced thermal characteristics help in dissipating heat effectively, thus improving overall system reliability.
For detailed applications and specific performance metrics, always refer to the manufacturer's datasheet.
Features
1. Low On-Resistance (RDS(on)): Offers low on-resistance for efficient power delivery and reduced heat generation.
2. High Voltage Rating: Typically rated for 30V, making it suitable for various applications, including DC-DC converters and power management circuits.
3. Fast Switching Speed: Designed for quick switching times, enhancing overall efficiency in high-frequency applications.
4. Thermal Performance: Equipped with good thermal dissipation capabilities, supporting reliable operation at higher currents.
5. Gate Threshold Voltage: Features a low gate threshold voltage, allowing for better drive performance with lower control voltages.
6. Compact Package: Available in a small footprint package, facilitating space-saving designs in various electronic devices.
These features make the FDC638P ideal for applications in consumer electronics, automotive, and industrial power systems.
Package
Pinout
1. Gate 1 (G1): Controls the first MOSFET.
2. Drain 1 (D1): Output for the first MOSFET.
3. Source 1 (S1): Source terminal for the first MOSFET.
4. Gate 2 (G2): Controls the second MOSFET.
5. Drain 2 (D2): Output for the second MOSFET.
6. Source 2 (S2): Source terminal for the second MOSFET.
7. Drain (D): Common drain for both MOSFETs.
8. Source (S): Common source for both MOSFETs.
The FDC638P is commonly used in power management applications due to its low on-resistance and high efficiency.
Manufacturer
Application
Equivalent
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Zahlungen
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