FDD16AN08A0

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FDD16AN08A0

POWER FIELD-EFFECT TRANSISTOR, 9

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Spezifikationen

Package Bulk
Series UltraFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 75 V
Current-ContinuousDrain(Id)@25°C 9A (Ta), 50A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V
RdsOn(Max)@IdVgs 16mOhm @ 50A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 47 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1874 pF @ 25 V
PowerDissipation(Max) 135W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount

Übersicht

Description

The FDD16AN08A0 is a N-channel MOSFET manufactured by ON Semiconductor, designed for power management applications. It features a maximum drain-source voltage (Vds) of 80V and a continuous drain current (Id) of 16A, making it suitable for various high-efficiency switching and amplification tasks in power supplies, motor drives, and lighting systems.
Key specifications include a low on-resistance (Rds(on)), which minimizes conduction losses and enhances thermal performance, and a fast switching speed, which improves overall efficiency in applications such as DC-DC converters. The device is housed in a TO-220 package, allowing for effective heat dissipation.
The FDD16AN08A0 is ideal for designers seeking reliable performance in compact power circuits, combining robustness with versatility across different voltage and current conditions. Its features make it a popular choice in automotive, industrial, and consumer electronics applications.

Features

The FDD16AN08A0 is a N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: It typically supports a maximum drain-source voltage (V_DS) of 80V.
2. Current Rating: The continuous drain current (I_D) can handle up to 16A, making it suitable for various power applications.
3. R_DS(on): It offers low on-resistance, which minimizes conduction losses and enhances efficiency.
4. Fast Switching Speed: The MOSFET is designed for rapid switching, facilitating efficient power management in circuits.
5. Thermal Performance: It has a maximum junction temperature of around 150°C, allowing operation in demanding environments.
6. Package Type: Usually available in a TO-220 package, it provides effective heat dissipation.
7. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is low, enabling effective control with standard logic levels.
These features make the FDD16AN08A0 suitable for applications in power supplies, motor drives, and other switching devices.

Package

The FDD16AN08A0 is typically available in a TO-220 package type. This package is known for its robustness and is commonly used for power semiconductor devices, providing good thermal performance and ease of mounting.

Pinout

The FDD16AN08A0 is an N-channel MOSFET in a TO-220 package, commonly used for power management applications. It features a pin count of three.
The pin functions are as follows:
1. Gate (G): This pin controls the MOSFET's switching behavior. A voltage applied here allows current to flow from the drain to the source.
2. Drain (D): This pin is the output terminal where the load is connected. The current flows from this pin when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or negative side of the circuit. It serves as the return path for the current.
The FDD16AN08A0 is suitable for various applications, including power supply conversion and motor control. Its design allows for efficient switching and low on-resistance, making it ideal for high-performance electronic devices.

Manufacturer

The FDD16AN08A0 is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in providing a wide range of products, including power management, analog, discrete, and sensor solutions. The company serves various industries such as automotive, industrial, communications, and consumer electronics. Established through various mergers and acquisitions, ON Semiconductor has positioned itself as a leader in energy-efficient innovations, catering to the increasing demand for sustainable technology solutions.

Application

The FDD16AN08A0 is a N-channel MOSFET commonly used in various applications, including power management, DC-DC converters, motor drivers, and switching power supplies. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency designs in consumer electronics, automotive systems, and industrial equipment.

Equivalent

The FDD16AN08A0 is a N-channel MOSFET primarily used in power management applications. Equivalent products include the IRF3205, STP55NF06, and BSS138. Always check specifications such as voltage, current ratings, and RDS(on) to ensure compatibility for your specific application.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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